WFRF:(Winkler T. W.)
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Subthreshold behavior of triple-gate MOSFETs on SOI material
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- Lemme, Max C., 1970- (author)
- AMO GmbH, AMICA, Aachen, Germany
- Mollenhauer, T. (author)
- Henschel, W. (author)
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- Wahlbrink, T. (author)
- Baus, M. (author)
- Winkler, O. (author)
- Granzner, R. (author)
- Schwierz, F. (author)
- Spangenberg, B. (author)
- Kurz, H. (author)
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- (creator_code:org_t)
- Elsevier BV, 2004
- 2004
- English.
- In: Solid-State Electronics. - : Elsevier BV. - 0038-1101 .- 1879-2405. ; 48:4, s. 529-534
- Journal article (peer-reviewed)
Abstract
Subject headings
Close
- The fabrication of n-type multi-wire MOSFETs on SOI material with triple-gate structures is presented. The output and transfer characteristics of devices with a gate length of 70 nm and a MESA width of 22 nm demonstrate clearly the suppression of short channel effects (SCE). In addition, these triple-gate structures are compared with planar SOI devices of comparable dimensions. The influence of biasing the substrate (back gate) is analyzed and compared to simulation data.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
Keyword
- triple-gate
- FinFET
- multi-gate
- SOI
- back gate bias
Publication and Content Type
- ref (subject category)
- art (subject category)
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- Mollenhauer, T.
- Henschel, W.
- Wahlbrink, T.
- Baus, M.
- Winkler, O.
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- Granzner, R.
- Schwierz, F.
- Spangenberg, B.
- Kurz, H.
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- ENGINEERING AND TECHNOLOGY
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- Royal Institute of Technology
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