Low-frequency and microwave performances of laser-ablated epitaxialNa 0.5 K 0.5 NbO 3 films on high-resistivitySiO 2 /Si substrates

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Fältnamn	Indikatorer	Metadata
000		02401naa a2200325 4500
001		oai:research.chalmers.se:758d1538-99fe-439c-bc8b-883637f01870
003		SwePub
008		171007s2002 \| \|\|\|\|\|\|\|\|\|\|\|000 \|\|eng\|
024	7	a https://research.chalmers.se/publication/2123352 URI
024	7	a https://doi.org/10.1063/1.14305452 DOI
040		a (SwePub)cth
041		a engb eng
042		9 SwePub
072	7	a art2 swepub-publicationtype
072	7	a ref2 swepub-contenttype
100	1	a Abadei, Saeed,d 1961u Chalmers tekniska högskola,Chalmers University of Technology4 aut
245	1 0	a Low-frequency and microwave performances of laser-ablated epitaxialNa 0.5 K 0.5 NbO 3 films on high-resistivitySiO 2 /Si substrates
264	1	b AIP Publishing,c 2002
520		a The dielectric properties of laser-ablated 0.5-μm-thick c-axis epitaxialNa 0.5 K 0.5 NbO 3 (NKN) films on high-resistivity (>7.7 kΩ cm) siliconSiO 2 /Si substrates are studied experimentally in the temperature interval of 30–320 K and at frequencies of 1.0 MHz–40 GHz. The films are grown by laser ablation from a stoichiometric target. For the measurements, planar 0.5-μm-thick gold electrodes (interdigital and straight slot) are photolithography defined on the top surface of NKN films. The slot width between the electrodes is 2.0 or 4.0 μm. At low frequencies(f 1. At microwave frequencies(f>10 GHz), the voltage dependence of the capacitance is given by the NKN film. More than a 13% capacitance change at 40 V dc bias and a Q factor of more than 15 are observed at 40 GHz, which make the structure useful for applications in electrically tunable millimeter-wave devices
650	7	a NATURVETENSKAPx Fysikx Den kondenserade materiens fysik0 (SwePub)103042 hsv//swe
650	7	a NATURAL SCIENCESx Physical Sciencesx Condensed Matter Physics0 (SwePub)103042 hsv//eng
653		a Dielectric thin films
653		a Capacitance
653		a Electrical resistivity
700	1	a Gevorgian, Spartak,d 1948u Chalmers tekniska högskola,Chalmers University of Technology4 aut0 (Swepub:cth)spartak
700	1	a Grishin, Alex4 aut
710	2	a Chalmers tekniska högskola4 org
773	0	t Journal of Applied Physicsd : AIP Publishingg 91, s. 2267-q 91<2267-x 0021-8979x 1089-7550
856	4 8	u https://research.chalmers.se/publication/212335
856	4 8	u https://doi.org/10.1063/1.1430545

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