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Characterization of...
Characterization of deep level defects in sublimation grown p-type 6H-SiC epilayers by deep level transient spectroscopy
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- Asghar, M. (author)
- Islamia University of Bahawalpur, Pakistan
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- Iqbal, F. (author)
- Islamia University of Bahawalpur, Pakistan
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- Faraz, Sadia (author)
- Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
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- Jokubavicius, Valdas (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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- Wahab, Qamar (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Syväjärvi, Mikael (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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(creator_code:org_t)
- Elsevier, 2012
- 2012
- English.
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In: Physica B: Condensed Matter. - : Elsevier. - 0921-4526.
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- In this study deep level transient spectroscopy has been performed on boron-nitrogen co-doped 6H-SiC epilayers exhibiting p-type conductivity with free carrier concentration (N-A-N-D)similar to 3 x 10(17) cm(-3). We observed a hole H-1 majority carrier and an electron E-1 minority carrier traps in the device having activation energies E-nu + 0.24 eV, E-c -0.41 eV, respectively. The capture cross-section and trap concentration of H-1 and E-1 levels were found to be (5 x 10(-19) cm(2), 2 x 10(15) cm(-3)) and (1.6 x 10(-16) cm(2), 3 x 10(15) cm(-3)), respectively. Owing to the background involvement of aluminum in growth reactor and comparison of the obtained data with the literature, the H-1 defect was identified as aluminum acceptor. A reasonable justification has been given to correlate the E-1 defect to a nitrogen donor.
Keyword
- SiC; DLTS; Acceptors; Donors; Doping; Deep level defects; LED
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- kon (subject category)
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