EPR Identification of Defects and Impurities in SiC: To Be Decisive

EPR Identification of Defects and Impurities in SiC : To Be Decisive

Isoya, J. (author)

Umeda, T. (author)

Mizuochi, N. (author)

Nguyen, Son Tien, 1953- (author): Linköpings universitet,Tekniska högskolan,Halvledarmaterial

Janzén, Erik, 1954- (author): Linköpings universitet,Tekniska högskolan,Halvledarmaterial

Ohshima, T. (author)

(creator_code:org_t)

Trans Tech Publications, 2009
2009
English.
In: Materials Science Forum, Vols. 600-603. - : Trans Tech Publications. ; , s. 279-284

Related links:: https://urn.kb.se/re...; show more...; https://doi.org/10.4...; show less...

Abstract Subject headings

In EPR (electron paramagnetic resonance) identification of point defects, hyperfine (HF) interaction is decisive information not only for chemical identity but also for the local geometry and the electronic state. In some intrinsic defects in SiC, the wave function of the unpaired electron extends quite unevenly among major atoms comprising the defects. In such a case, the determination of the number of equivalent atoms and the chemical identity (Si or C) of those atoms even with weak HF splitting are useful to compare with HF parameters obtained theoretically. For vacancy-related defects of relatively deep levels, the sum of the spin densities on the nearest-neighbor shell is found to be 60-68%.

By the author/editor: Isoya, J.; Umeda, T.; Mizuochi, N.; Nguyen, Son Tien ...; Janzén, Erik, 19 ...; Ohshima, T.

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