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EPR Identification ...
EPR Identification of Defects and Impurities in SiC : To Be Decisive
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Isoya, J. (author)
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Umeda, T. (author)
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Mizuochi, N. (author)
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- Nguyen, Son Tien, 1953- (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Janzén, Erik, 1954- (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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Ohshima, T. (author)
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(creator_code:org_t)
- Trans Tech Publications, 2009
- 2009
- English.
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In: Materials Science Forum, Vols. 600-603. - : Trans Tech Publications. ; , s. 279-284
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.4...
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Abstract
Subject headings
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- In EPR (electron paramagnetic resonance) identification of point defects, hyperfine (HF) interaction is decisive information not only for chemical identity but also for the local geometry and the electronic state. In some intrinsic defects in SiC, the wave function of the unpaired electron extends quite unevenly among major atoms comprising the defects. In such a case, the determination of the number of equivalent atoms and the chemical identity (Si or C) of those atoms even with weak HF splitting are useful to compare with HF parameters obtained theoretically. For vacancy-related defects of relatively deep levels, the sum of the spin densities on the nearest-neighbor shell is found to be 60-68%.
Keyword
- NATURAL SCIENCES
- NATURVETENSKAP
Publication and Content Type
- ref (subject category)
- kon (subject category)
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