Sputter-Deposited Indium-Tin Oxide Thin Films for Acetaldehyde Gas Sensing

Reactive dual-target DC magnetron sputtering was used to prepare In-Sn oxide thin films with a wide range of compositions. The films were subjected to annealing post-treatment at 400 degrees C or 500 degrees C for different periods of time. Compositional and structural characterizations were performed by X-ray photoelectron spectroscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, Rutherford backscattering and scanning electron microscopy. Films were investigated for gas sensing at 200 degrees C by measuring their resistance response upon exposure to acetaldehyde mixed with synthetic air. We found that the relative indium-to-tin content was very important and that measurable sensor responses could be recorded at acetaldehyde concentrations down to 200 ppb, with small resistance drift between repeated exposures, for both crystalline SnO2-like films and for amorphous films consisting of about equal amounts of In and Sn. We also demonstrated that it is not possible to prepare crystalline sensors with intermediate indium-to-tin compositions by sputter deposition and post-annealing up to 500 degrees C.

Lansåker, Pia C.Uppsala universitet,Fasta tillståndets fysik(Swepub:uu)piala732 (author)
Österlund, LarsUppsala universitet,Fasta tillståndets fysik(Swepub:uu)laros288 (author)
Niklasson, Gunnar A.Uppsala universitet,Fasta tillståndets fysik(Swepub:uu)gni26208 (author)
Granqvist, Claes-GöranUppsala universitet,Fasta tillståndets fysik(Swepub:uu)cgr25299 (author)
Uppsala universitetFasta tillståndets fysik (creator_code:org_t)

By the author/editor: Cindemir, Umut; Lansåker, Pia C.; Österlund, Lars; Niklasson, Gunna ...; Granqvist, Claes ...

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