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Morphology of Thin Films of Aromatic Ellagic Acid and Its Hydrogen Bonding Interactions

Bittrich, Eva (author)
Leibniz Inst Polymerforsch Dresden eV, Germany
Domke, Jari (author)
Friedrich Schiller Univ Jena, Germany
Jehnichen, Dieter (author)
Leibniz Inst Polymerforsch Dresden eV, Germany
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Bittrich, Lars (author)
Leibniz Inst Polymerforsch Dresden eV, Germany
Malanin, Mikhail (author)
Leibniz Inst Polymerforsch Dresden eV, Germany
Janke, Andreas (author)
Leibniz Inst Polymerforsch Dresden eV, Germany
Uhlmann, Petra (author)
Leibniz Inst Polymerforsch Dresden eV, Germany; Univ Nebraska, NE 68588 USA
Eichhorn, Klaus-Jochen (author)
Leibniz Inst Polymerforsch Dresden eV, Germany
Papamichail, Alexis (author)
Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
Stanishev, Vallery (author)
Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
Darakchieva, Vanya (author)
Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
Al-Hussein, Mahmoud (author)
Univ Jordan, Jordan
Levichkova, Marieta (author)
Heliatek GmbH, Germany
Fritz, Torsten (author)
Friedrich Schiller Univ Jena, Germany
Walzer, Karsten (author)
Heliatek GmbH, Germany
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 (creator_code:org_t)
2020-07-17
2020
English.
In: The Journal of Physical Chemistry C. - : AMER CHEMICAL SOC. - 1932-7447 .- 1932-7455. ; 124:30, s. 16381-16390
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • Ellagic acid (EA), an antioxidant from fruits or other plants, has recently evoked interest in the field of organic electronics because of its weak electron donor properties. In this work, the preparation of uniaxial pi-stacked EA films by thermal evaporation on different surfaces is reported for the first time. The (102) lattice plane of the pi-electron system was confirmed as the contact plane for one monolayer equivalent on Ag(111) by low-electron energy diffraction. X-ray and atomic force microscopy measurements revealed nanocrystalline grains with an average inplane size of 50 nm and considerably smaller average out-of-plane crystallite sizes (16-25 nm) in films of 16-75 nm thickness. The influence of different substrates was minor compared to the effect of the film thickness. An increase in the in-plane density of grains at larger film thicknesses was deduced from the trend in their uniaxial optical properties. Weak and strong intermolecular H-bonding interactions were identified in the EA crystal lattice, while a surplus of weak H-bonding was observed for the nanocrystallites in thin films, as compared to bulk EA. Finally, EA was coevaporated with the semiconducting thiophene molecule DCV4T-Et-2 to demonstrate principle interactions with a guest molecule by H-bonding analysis. Our results illustrate the feasibility of applying EA films as alignment layers for templating other semiconducting organic films used in organic electronic devices.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

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