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Identification of divacancy and silicon vacancy qubits in 6H-SiC

Davidsson, Joel (author)
Linköpings universitet,Teoretisk Fysik,Tekniska fakulteten
Ivády, Viktor (author)
Linköpings universitet,Teoretisk Fysik,Tekniska fakulteten,Hungarian Acad Sci, Hungary
Armiento, Rickard (author)
Linköpings universitet,Teoretisk Fysik,Tekniska fakulteten
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Ohshima, Takeshi (author)
Natl Inst Quantum and Radiol Sci and Technol, Japan
Nguyen, Son Tien (author)
Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
Gali, Adam (author)
Hungarian Acad Sci, Hungary; Budapest Univ Technol and Econ, Hungary
Abrikosov, Igor (author)
Linköpings universitet,Teoretisk Fysik,Tekniska fakulteten,Natl Univ Sci and Technol MISIS, Russia
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 (creator_code:org_t)
AMER INST PHYSICS, 2019
2019
English.
In: Applied Physics Letters. - : AMER INST PHYSICS. - 0003-6951 .- 1077-3118. ; 114:11
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • Point defects in semiconductors are relevant for use in quantum technologies as room temperature qubits and single photon emitters. Among suggested defects for these applications are the negatively charged silicon vacancy and the neutral divacancy in SiC. The possible nonequivalent configurations of these defects have been identified in 4H-SiC, but for 6H-SiC, the work is still in progress. In this paper, we identify the different configurations of the silicon vacancy and the divacancy defects to each of the V1-V3 and the QL1-QL6 color centers in 6H-SiC, respectively. We accomplish this by comparing the results from ab initio calculations with experimental measurements for the zero-phonon line, hyperfine tensor, and zero-field splitting. Published under license by AIP Publishing.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

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