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Core and valence ex...
Core and valence exciton formation in x-ray absorption, x-ray emission and x-ray excited optical luminescence from passivated Si nanocrystals at the Si L-2,L-3 edge
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Siller, L. (author)
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Krishnamurthy, S. (author)
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- Kjeldgaard, Lisbeth (author)
- Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory
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Horrocks, B. R. (author)
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Chao, Y. (author)
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Houlton, A. (author)
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Chakraborty, A. K. (author)
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Hunt, M. R. C. (author)
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(creator_code:org_t)
- 2009-01-30
- 2009
- English.
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In: Journal of Physics: Condensed Matter. - : IOP Publishing. - 1361-648X .- 0953-8984. ; 21:9
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http://dx.doi.org/10...
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https://lup.lub.lu.s...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Resonant inelastic x-ray scattering (RIXS), x-ray absorption spectroscopy and x-ray excited optical luminescence (XEOL) have been used to measure element specific filled and empty electronic states over the Si L-2,L-3 edge of passivated Si nanocrystals of narrow size distribution ( diameter 2.2 +/- 0.4 nm). These techniques have been employed to directly measure absorption and luminescence specific to the local Si nanocrystal core. Profound changes occur in the absorption spectrum of the nanocrystals compared with bulk Si, and new features are observed in the nanocrystal RIXS. Clear signatures of core and valence band exciton formation, promoted by the spatial confinement of electrons and holes within the nanocrystals, are observed, together with band narrowing due to quantum confinement. XEOL at 12 K shows an extremely sharp feature at the threshold of orange luminescence (i.e., at similar to 1.56 eV ( 792 nm)) which we attribute to recombination of valence excitons, providing a lower limit to the nanocrystal band gap.
Subject headings
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Publication and Content Type
- art (subject category)
- ref (subject category)
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