A new physics-based circuit model for 4H-SiC power diodes implemented in SABER

NR 20140805
A circuit-oriented model for 4H-SiC power diodes is presented. The modeling technique used in this work was previously applied to a silicon (Si) power diode model for both turn-on and turn-off transients, and presents a good trade-off between accuracy and speed. The model is physics-based, but includes judicious approximations for fast calculation, and includes up-to-date physical models for silicon carbide, with temperature dependence. The proposed model is practically implemented in the circuit simulator SABER, using the MAST modeling language. Model performances are compared to measurements on 2.5 kV 400 A Si IGBT/SiC diode modules from ABB at various input currents.

TEKNIK OCH TEKNOLOGIER Elektroteknik och elektronik hsv//swe
ENGINEERING AND TECHNOLOGY Electrical Engineering, Electronic Engineering, Information Engineering hsv//eng
2.5 kV
400 A
4H-SiC power diodes
MAST modeling language
SABER
SiC
approximations
computer simulation
physics-based circuit model
turn-off transients
turn-on transients

Nee, Hans-Peter,1963-KTH,Elektrisk energiomvandling(Swepub:kth)u1ycw7mc (författare)
KTHElektrisk energiomvandling (creator_code:org_t)

Ingår i:Proc. of the Sixteenth Annual IEEE Applied Power Electronics Conference and Exposition, 2001, APEC 2001, vol. 2, 4-8 March 2001., s. 989-994

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