Cryogenic low-noise InP HEMTs: A source-drain distance study

• The scaling effect of the source-drain distance was investigated in order to improve the performance of low-noise InP HEMTs at cryogenic temperatures 4-15 K. The highest dc transconductance at an operating temperature of 4.8 K and low bias power was achieved at a source-drain distance of 1.4 mu m. The extracted HEMT minimum noise temperature was 0.9 K at 5.8 GHz for a 3-stage 4-8 GHz hybrid low-noise amplifier at 10 K.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

InP HEMT

low noise temperature

cryogenic operation

Publikations- och innehållstyp

kon (ämneskategori)

ref (ämneskategori)