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Influence of conduction-band nonparabolicity on electron confinement and effective mass in GaNxAs1−x∕GaAs quantum wells
- Tomic, S. (author)
- OReilly, E. P. (author)
- Klar, P. J. (author)
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- Gruning, H. (author)
- Heimbrodt, W. (author)
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- (creator_code:org_t)
- 2004
- 2004
- English.
- In: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 69, s. 245305-
- Journal article (peer-reviewed)
Abstract
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- We derive an analytical model to describe the conduction-band states of GaNAs-based quantum well structures, including the band anticrossing effect between N resonant states and the conduction-band edge. The predictions of the model are compared to those obtained using a full ten-band k·p model based on the same set of parameters. Both methods are then tested by comparison with the experimentally determined ground- and excited-state interband transition energies of GaNxAs1−x quantum wells of different well widths and N composition x obtained at 300 K and under hydrostatic pressures up to 2.0 GPa . We show that the transition energies can be described by a consistent set of material parameters in all the samples studied, and present how the conduction to valence-band offset ratio varies strongly with x in GaNxAs1−x∕GaAs quantum well structures. We conclude that the model presented can be used to predict the transition energies and electron subband structure of any GaNxAs1−x∕GaAs quantum well with well width between 2 and 25 nm , and N composition x between 1 and 4% , although further work is still required to confirm the optimum choice for the variation of band offset ratio with composition.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
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- NATURAL SCIENCES
- NATURVETENSKAP
- Semiconductor physics
- Halvledarfysik
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