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Purely analytical extraction of an improved nonlinear FinFET model including non-quasi-static effects
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- Crupi, G. (author)
- Universita degli Studi di Messina,University of Messina
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- Schreurs, Dmmp (author)
- Katholieke Universiteit Leuven
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- Caddemi, A. (author)
- Universita degli Studi di Messina,University of Messina
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- (creator_code:org_t)
- Elsevier BV, 2009
- 2009
- English.
- In: Microelectronic Engineering. - : Elsevier BV. - 0167-9317. ; 86:11, s. 2283-2289
- Journal article (peer-reviewed)
Abstract
Subject headings
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- An analytical procedure is proposed for extracting a new nonlinear FinFET model, which accounts for non-quasi static effects. The accuracy and the robustness of the obtained nonlinear model are completely validated through the comparison between simulated and measured device behaviour in both linear and nonlinear cases. This study clearly shows that the inclusion of the non-quasi-static phenomena leads to significant model simulation improvements, which become more pronounced at higher frequency. (C) 2009 Elsevier B.V. All rights reserved.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Semiconductor device modeling
- device
- accurate
- fet model
- large-signal measurements
- FinFET
- mosfets
- Non-quasi-static effects
- parameter extraction
- Nonlinear model
- Large signal network analyzer
Publication and Content Type
- art (subject category)
- ref (subject category)
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- Crupi, G.
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- Homayouni, M.
- Raffo, A.
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- Vannini, G.
- Parvais, B.
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- Chalmers University of Technology
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