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Design and Characte...
Design and Characterization of H-Band (220-325 GHz) Amplifiers in a 250-nm InP DHBT Technology
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- Eriksson, Klas, 1983 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Gunnarsson, Sten, 1976 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Vassilev, Vessen, 1969 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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visa fler...
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- Zirath, Herbert, 1955 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- Institute of Electrical and Electronics Engineers (IEEE), 2014
- 2014
- Engelska.
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Ingår i: IEEE Transactions on Terahertz Science and Technology. - : Institute of Electrical and Electronics Engineers (IEEE). - 2156-342X .- 2156-3446. ; 4:1, s. 56-64
- Relaterad länk:
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https://research.cha...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Design and characterization of InP DHBT amplifiers in common-emitter and common-base topologies are presented. Both one-stage and multistage circuits are demonstrated. For one of the amplifiers, a peak gain of 24 dB at 255 GHz is measured, which is among the highest reported gains for HBT amplifiers above 200 GHz, and more than 10 dB gain at 210-315 GHz. The noise figure of this amplifier is measured on-wafer at 240-295 GHz, and it demonstrates a minimum noise figure of 10.4 dB at 265 GHz, which is the lowest reported noise figure for HBT amplifiers above 200 GHz.
Ämnesord
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Nyckelord
- millimeter-wave amplifier
- LOW-NOISE AMPLIFIER
- RECEIVER
- Double heterojunction bipolar transistor (DHBT)
- indium phosphide (InP)
- SUBMILLIMETER-WAVE
- monolithic microwave integrated circuit (MMIC)
- H-band
Publikations- och innehållstyp
- art (ämneskategori)
- ref (ämneskategori)
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