(WFRF:(Zhang Wei)) srt2:(2005-2009)
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Robust Low Voltage Program-Erasable Cobalt-Nanocrystal Memory Capacitors with Multistacked Al2O3/HfO2/Al2O3 Tunnel Barrier
- Liao, Zhong-Wei (author)
- Gou, Hong-Yan (author)
- Huang, Yue (author)
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- Sun, Qing-Qing (author)
- Ding, Shi-Jin (author)
- Zhang, Wei (author)
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- (creator_code:org_t)
- 2009
- 2009
- English.
- In: Chinese Physics Letters. - 0256-307X .- 1741-3540. ; 26:8, s. 087303-
- Journal article (peer-reviewed)
Abstract
Subject headings
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- An atomic-layer-deposited Al2O3/HfO2/Al2O3 (A/H/A) tunnel barrier is investigated for Co nanocrystal memory capacitors. Compared to a single Al2O3 tunnel barrier, the A/H/A barrier can significantly increase the hysteresis window, i. e., an increase by 9V for +/- 12V sweep range. This is attributed to a marked decrease in the energy barriers of charge injections for the A/H/A tunnel barrier. Further, the Co-nanocrystal memory capacitor with the A/H/A tunnel barrier exhibits a memory window as large as 4.1V for 100 mu s program/erase at a low voltage of +/- 7V, which is due to fast charge injection rates, i. e., about 2.4 x 10(16) cm(-2) s(-1) for electrons and 1.9 x 10(16) cm(-2) s(-1) for holes.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- NONVOLATILE MEMORY
- RETENTION
- Electrical engineering, electronics and photonics
- Elektroteknik, elektronik och fotonik
Publication and Content Type
- ref (subject category)
- art (subject category)
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- Liao, Zhong-Wei
- Gou, Hong-Yan
- Huang, Yue
- Sun, Qing-Qing
- Ding, Shi-Jin
- Zhang, Wei
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- Zhang, Shi-Li
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- Royal Institute of Technology
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