Search: L773:0038 1101 OR L773:1879 2405
> (1995-1999) >
ICP etching of SiC
ICP etching of SiC
-
Wang, J. J. (author)
-
Lambers, E. S. (author)
-
Pearton, S. J. (author)
-
show more...
-
- Östling, Mikael (author)
- KTH,Integrerade komponenter och kretsar
-
- Zetterling, Carl-Mikael (author)
- KTH,Integrerade komponenter och kretsar
-
Grow, J. M. (author)
-
Ren, F. (author)
-
Shul, R. J. (author)
-
show less...
-
(creator_code:org_t)
- 1998
- 1998
- English.
-
In: Solid-State Electronics. - 0038-1101 .- 1879-2405. ; 42:12, s. 2283-2288
- Related links:
-
http://www.scopus.co...
-
show more...
-
https://urn.kb.se/re...
-
show less...
Abstract
Subject headings
Close
- A number of different plasma chemistries, including NF3/O2, SF6/O2, SF6/Ar, ICl, IBr, Cl2/ Ar, BCl3/Ar and CH4/H2/Ar, have been investigated for dry etching of 6H and 3C-SiC in an inductively coupled plasma tool. Rates above 2000 Å cm-1 are found with fluorine-based chemistries at high ion currents. Surprisingly, Cl2-based etching does not provide high rates, even though the potential etch products (SiCl4 and CCl4) are volatile. Photoresist masks have poor selectivity over SiC in F2-based plasmas under normal conditions, and ITO or Ni is preferred. © 1998 Published by Elsevier Science Ltd. All rights reserved.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Chlorine
- Dry etching
- Masks
- Photoresists
- Plasma etching
- Silicon carbide
- Inductively coupled plasmas (ICP)
- Semiconducting silicon compounds
Publication and Content Type
- ref (subject category)
- art (subject category)
Find in a library
To the university's database