Via-hole etching for SiC

• Four different F2-based plasma chemistries for high-rate etching of SiC under inductively coupled plasma (ICP) conditions were examined. Much higher rates (up to 8000 #x2009; #xc5; #x2009;min-1) were achieved with NF3 and SF6 compared with BF3 and PF5, in good correlation with their bond energies and their dissociation efficiency in the ICP source. Three different materials (Al, Ni, and indium #x2013;tin oxide) were compared as possible masks during deep SiC etching for through-wafer via holes. Al appears to produce the best etch resistance, particularly when O2 is added to the plasma chemistry. With the correct choice of plasma chemistry and mask material, ICP etching appears to be capable of producing via holes in SiC substrates. #xa9; 1999 American Vacuum Society.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

masks;plasma chemistry;silicon compounds;sputter etching;wide band gap semiconductors

Publikations- och innehållstyp

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