Structural and morphological properties of ZnO: Ga thin films

Khranovskyy, V.Institute for Problems of Material Science, Krzhyzhanovskyy str. 3, 03142 Kiev, Ukraine, University of Oslo, Physics Department, Centre for Materials Science and Nanotechnology, N-0316 Oslo, Norway (författare)

Structural and morphological properties of ZnO : Ga thin films

Zinc oxide (ZnO) is a promising semiconductor material with a great variety of applications. Compared to undoped ZnO, impurity-doped ZnO has a lower resistivity and better stability. With this aim, Ga has been proposed as a dopant. In this study, the structural characteristics and surface morphology of ZnO films produced by PEMOCVD at a substrate temperature of 250 °C on the c-plane (001) of sapphire were investigated. Doping was realized with 1, 3, 5 and 10 wt.% of Ga2(AA)3 in the precursor's mixture. At lower contents, Ga stimulates growth of (002) oriented textured films and the smallest FWHM was obtained as low as 0.17° for ZnO:Ga with 1 wt.%. A change in preferential orientation as well as surface smoothing and roughness decreasing of the films were observed with further increasing Ga content in precursor's mixture. We assume a key role of Ga and note that such a feature would be beneficial for the application of ZnO thin films for formation of abrupt junctions in p-n device structures. © 2005 Elsevier B.V. All rights reserved.

Grossner, U.University of Oslo, Physics Department, Centre for Materials Science and Nanotechnology, N-0316 Oslo, Norway (författare)
Nilsen, O.University of Oslo, Chemistry Department, Centre for Materials Science and Nanotechnology, N-0316 Oslo, Norway (författare)
Lazorenko, V.Institute for Problems of Material Science, Krzhyzhanovskyy str. 3, 03142 Kiev, Ukraine (författare)
Lashkarev, G.V.Institute for Problems of Material Science, Krzhyzhanovskyy str. 3, 03142 Kiev, Ukraine (författare)
Svensson, B.G.University of Oslo, Physics Department, Centre for Materials Science and Nanotechnology, N-0316 Oslo, Norway (författare)
Yakimova, RositsaLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)rosia15 (författare)
Institute for Problems of Material Science, Krzhyzhanovskyy str. 3, 03142 Kiev, Ukraine, University of Oslo, Physics Department, Centre for Materials Science and Nanotechnology, N-0316 Oslo, NorwayUniversity of Oslo, Physics Department, Centre for Materials Science and Nanotechnology, N-0316 Oslo, Norway (creator_code:org_t)

Ingår i:Thin Solid Films: Elsevier BV515:2 SPEC. ISS., s. 472-4760040-60901879-2731

Av författaren/redakt...: Khranovskyy, V.; Grossner, U.; Nilsen, O.; Lazorenko, V.; Lashkarev, G.V.; Svensson, B.G.; visa fler...; Yakimova, Rosits ...; visa färre...

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