WFRF:(Grossner U)
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| Fältnamn | Indikatorer | Metadata |
|---|---|---|
| 000 | 03439naa a2200397 4500 | |
| 001 | oai:DiVA.org:liu-50103 | |
| 003 | SwePub | |
| 008 | 091011s2006 | |||||||||||000 ||eng| | |
| 024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-501032 URI |
| 024 | 7 | a https://doi.org/10.1016/j.tsf.2005.12.2692 DOI |
| 040 | a (SwePub)liu | |
| 041 | a engb eng | |
| 042 | 9 SwePub | |
| 072 | 7 | a ref2 swepub-contenttype |
| 072 | 7 | a art2 swepub-publicationtype |
| 100 | 1 | a Khranovskyy, V.u Institute for Problems of Material Science, Krzhyzhanovskyy str. 3, 03142 Kiev, Ukraine, University of Oslo, Physics Department, Centre for Materials Science and Nanotechnology, N-0316 Oslo, Norway4 aut |
| 245 | 1 0 | a Structural and morphological properties of ZnO :b Ga thin films |
| 264 | 1 | b Elsevier BV,c 2006 |
| 338 | a print2 rdacarrier | |
| 520 | a Zinc oxide (ZnO) is a promising semiconductor material with a great variety of applications. Compared to undoped ZnO, impurity-doped ZnO has a lower resistivity and better stability. With this aim, Ga has been proposed as a dopant. In this study, the structural characteristics and surface morphology of ZnO films produced by PEMOCVD at a substrate temperature of 250 °C on the c-plane (001) of sapphire were investigated. Doping was realized with 1, 3, 5 and 10 wt.% of Ga2(AA)3 in the precursor's mixture. At lower contents, Ga stimulates growth of (002) oriented textured films and the smallest FWHM was obtained as low as 0.17° for ZnO:Ga with 1 wt.%. A change in preferential orientation as well as surface smoothing and roughness decreasing of the films were observed with further increasing Ga content in precursor's mixture. We assume a key role of Ga and note that such a feature would be beneficial for the application of ZnO thin films for formation of abrupt junctions in p-n device structures. © 2005 Elsevier B.V. All rights reserved. | |
| 653 | a AFM | |
| 653 | a PEMOCVD | |
| 653 | a XRD | |
| 653 | a ZnO doped by Ga | |
| 653 | a NATURAL SCIENCES | |
| 653 | a NATURVETENSKAP | |
| 700 | 1 | a Grossner, U.u University of Oslo, Physics Department, Centre for Materials Science and Nanotechnology, N-0316 Oslo, Norway4 aut |
| 700 | 1 | a Nilsen, O.u University of Oslo, Chemistry Department, Centre for Materials Science and Nanotechnology, N-0316 Oslo, Norway4 aut |
| 700 | 1 | a Lazorenko, V.u Institute for Problems of Material Science, Krzhyzhanovskyy str. 3, 03142 Kiev, Ukraine4 aut |
| 700 | 1 | a Lashkarev, G.V.u Institute for Problems of Material Science, Krzhyzhanovskyy str. 3, 03142 Kiev, Ukraine4 aut |
| 700 | 1 | a Svensson, B.G.u University of Oslo, Physics Department, Centre for Materials Science and Nanotechnology, N-0316 Oslo, Norway4 aut |
| 700 | 1 | a Yakimova, Rositsau Linköpings universitet,Halvledarmaterial,Tekniska högskolan4 aut0 (Swepub:liu)rosia15 |
| 710 | 2 | a Institute for Problems of Material Science, Krzhyzhanovskyy str. 3, 03142 Kiev, Ukraine, University of Oslo, Physics Department, Centre for Materials Science and Nanotechnology, N-0316 Oslo, Norwayb University of Oslo, Physics Department, Centre for Materials Science and Nanotechnology, N-0316 Oslo, Norway4 org |
| 773 | 0 | t Thin Solid Filmsd : Elsevier BVg 515:2 SPEC. ISS., s. 472-476q 515:2 SPEC. ISS.<472-476x 0040-6090x 1879-2731 |
| 856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-50103 |
| 856 | 4 8 | u https://doi.org/10.1016/j.tsf.2005.12.269 |
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- Khranovskyy, V.
- Grossner, U.
- Nilsen, O.
- Lazorenko, V.
- Lashkarev, G.V.
- Svensson, B.G.
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- Yakimova, Rosits ...
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- Thin Solid Films
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- Linköpings universitet
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