WFRF:(Malm B. Gunnar)
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High-Voltage 4H-SiC PiN Diodes With Etched Junction Termination Extension
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- Ghandi, Reza (author)
- KTH,Integrerade komponenter och kretsar
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- Buono, Benedetto (author)
- KTH,Integrerade komponenter och kretsar
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- Domeij, Martin (author)
- KTH,Integrerade komponenter och kretsar
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- (creator_code:org_t)
- Institute of Electrical and Electronics Engineers (IEEE), 2009
- 2009
- English.
- In: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 30:11, s. 1170-1172
- Journal article (peer-reviewed)
Abstract
Subject headings
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- Implantation-free mesa-etched 4H-SiC PiN diodes with a near-ideal breakdown voltage of 4.3 kV (about 80% of the theoretical value) were fabricated, measured, and analyzed by device simulation and optical imaging measurements at breakdown. The key step in achieving a high breakdown voltage is a controlled etching into the epitaxially grown p-doped anode layer to reach an optimum dopant dose of similar to 1.2 x 10(13) cm(-2) in the junction termination extension (JTE). Electroluminescence revealed a localized avalanche breakdown that is in good agreement with device simulation. A comparison of diodes with single-and double-zone etched JTEs shows a higher breakdown voltage and a less sensitivity to varying processing conditions for diodes with a two-zone JTE.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Junction termination extension
- PiN diode
- 4H-SiC
Publication and Content Type
- ref (subject category)
- art (subject category)
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