High-Voltage 4H-SiC PiN Diodes With Etched Junction Termination Extension

• Implantation-free mesa-etched 4H-SiC PiN diodes with a near-ideal breakdown voltage of 4.3 kV (about 80% of the theoretical value) were fabricated, measured, and analyzed by device simulation and optical imaging measurements at breakdown. The key step in achieving a high breakdown voltage is a controlled etching into the epitaxially grown p-doped anode layer to reach an optimum dopant dose of similar to 1.2 x 10(13) cm(-2) in the junction termination extension (JTE). Electroluminescence revealed a localized avalanche breakdown that is in good agreement with device simulation. A comparison of diodes with single-and double-zone etched JTEs shows a higher breakdown voltage and a less sensitivity to varying processing conditions for diodes with a two-zone JTE.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Junction termination extension

PiN diode

4H-SiC

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