WFRF:(Monemar Bo 1942 )
Sökning: WFRF:(Monemar Bo 1942 ) > (2015-2019) > Optical Properties ...
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| Fältnamn | Indikatorer | Metadata |
|---|---|---|
| 000 | 03375naa a2200373 4500 | |
| 001 | oai:DiVA.org:liu-151554 | |
| 003 | SwePub | |
| 008 | 180923s2017 | |||||||||||000 ||eng| | |
| 009 | oai:lup.lub.lu.se:a49e27d2-8c5d-4ae3-a51f-1e3f8dd680f9 | |
| 024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-1515542 URI |
| 024 | 7 | a https://lup.lub.lu.se/record/a49e27d2-8c5d-4ae3-a51f-1e3f8dd680f92 URI |
| 024 | 7 | a https://doi.org/10.1201/97813151520112 DOI |
| 040 | a (SwePub)liud (SwePub)lu | |
| 041 | a engb eng | |
| 042 | 9 SwePub | |
| 072 | 7 | a ref2 swepub-contenttype |
| 072 | 7 | a kap2 swepub-publicationtype |
| 100 | 1 | a Paskov, Plamen P.,d 1959-u Linköping University,Linköpings universitet,Halvledarmaterial,Tekniska fakulteten4 aut0 (Swepub:liu)plapa31 |
| 245 | 1 0 | a Optical Properties of III-Nitride Semiconductors |
| 250 | a 1 | |
| 264 | 1 | a Boca Raton :b CRC Press,c 2017 |
| 338 | a print2 rdacarrier | |
| 520 | a The optical properties of the group-III-nitride materials are obviously of direct relevance for optoelectronic applications, but experiments measuring optical properties also give information on a range of electronic properties. There is already a wealth of data in the literature on the optical properties of III-nitrides [1–4], and here we will concentrate on some of the most recent additions to the scientific knowledge. The focus, looking at the present situation concerning technical applications of these materials, has been on GaN, InGaN, and AlGaN in recent decades. AlGaN materials are important for ultraviolet (UV) emitters and high electron mobility transistor (HEMT) structures and AlGaN optical properties have accordingly been studied over the entire Al composition range. InGaN materials (with In content <50%) have also been studied extensively, and the light-emitting diode (LED) applications based on InGaN/GaN quantum structures have already been awarded a Nobel Prize in 2014. However, the applications of InN are lagging behind. The development of growth procedures for InN and In-rich InGaN has been difficult, and their optical properties were consequently much less studied in the past. | |
| 650 | 7 | a NATURVETENSKAPx Fysik0 (SwePub)1032 hsv//swe |
| 650 | 7 | a NATURAL SCIENCESx Physical Sciences0 (SwePub)1032 hsv//eng |
| 650 | 7 | a NATURVETENSKAPx Fysikx Den kondenserade materiens fysik0 (SwePub)103042 hsv//swe |
| 650 | 7 | a NATURAL SCIENCESx Physical Sciencesx Condensed Matter Physics0 (SwePub)103042 hsv//eng |
| 700 | 1 | a Monemar, Bo,d 1942-u Linköping University,Lund University,Lunds universitet,Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,Tokyo University of Agriculture and Technology4 aut0 (Swepub:lu)ftf-bmo |
| 710 | 2 | a Linköpings universitetb Halvledarmaterial4 org |
| 773 | 0 | t Handbook of GaN Semiconductor Materials and Devicesd Boca Raton : CRC Pressg , s. 87-116q <87-116z 9781498747134z 9781498747141 |
| 856 | 4 | u http://dx.doi.org/10.1201/9781315152011y FULLTEXT |
| 856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-151554 |
| 856 | 4 8 | u https://lup.lub.lu.se/record/a49e27d2-8c5d-4ae3-a51f-1e3f8dd680f9 |
| 856 | 4 8 | u https://doi.org/10.1201/9781315152011 |
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