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Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence

Gu, Yi (author)
Chinese Academy of Sciences
Zhang, Yonggang (author)
Chinese Academy of Sciences
Song, Yuxin, 1981 (author)
Chalmers tekniska högskola,Chalmers University of Technology
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Ye, Hong, 1987 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Cao, Yuanying (author)
Chinese Academy of Sciences
Li, Aizhen (author)
Chinese Academy of Sciences
Wang, Shu Min, 1963 (author)
Chalmers tekniska högskola,Chalmers University of Technology
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 (creator_code:org_t)
2013-03-14
2013
English.
In: Chinese Physics B. - : IOP Publishing. - 1674-1056. ; 22:3, s. 037802-
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • The effect of bismuth on the optical properties of InGaAsBi/GaAs quantum well structures is investigated using the temperature-dependent photoluminescence from 12 K to 450 K. The incorporation of bismuth in the InGaAsBi quantum well is confirmed and found to result in a red shift of photoluminescence wavelength of 27.3 meV at 300 K. The photoluminescence intensity is significantly enhanced by about 50 times at 12 K with respect to that of the InGaAs quantum well due to the surfactant effect of bismuth. The temperature-dependent integrated photoluminescence intensities of the two samples reveal different behaviors related to various non-radiative recombination processes. The incorporation of bismuth also induces alloy non-uniformity in the quantum well, leading to an increased photoluminescence linewidth.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Materialteknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Materials Engineering (hsv//eng)
TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)
TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

quantum well
telecom
MBE
GaAsBi
dilute bismide
1.3 mum

Publication and Content Type

art (subject category)
ref (subject category)

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