WFRF:(Trinh Thang)
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LIBRIS Formathandbok (Information om MARC21)
| Fältnamn | Indikatorer | Metadata |
|---|---|---|
| 000 | 02472naa a2200361 4500 | |
| 001 | oai:DiVA.org:liu-91342 | |
| 003 | SwePub | |
| 008 | 130422s2013 | |||||||||||000 ||eng| | |
| 024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-913422 URI |
| 024 | 7 | a https://doi.org/10.1063/1.47961412 DOI |
| 040 | a (SwePub)liu | |
| 041 | a engb eng | |
| 042 | 9 SwePub | |
| 072 | 7 | a ref2 swepub-contenttype |
| 072 | 7 | a art2 swepub-publicationtype |
| 100 | 1 | a Kawahara, Koutarouu Kyoto University, Japan4 aut |
| 245 | 1 0 | a Investigation on origin of Z(1/2) center in SiC by deep level transient spectroscopy and electron paramagnetic resonance |
| 264 | 1 | b American Institute of Physics (AIP),c 2013 |
| 338 | a print2 rdacarrier | |
| 500 | a Funding Agencies|Japan Society for the Promotion of Science|2122600880225078|Swedish Energy Agency||Swedish Research Council VR/Linne LiLI-NFM||Knut and Alice Wallenberg Foundation|| | |
| 520 | a The Z(1/2) center in n-type 4H-SiC epilayers-a dominant deep level limiting the carrier lifetime-has been investigated. Using capacitance versus voltage (C-V) measurements and deep level transient spectroscopy (DLTS), we show that the Z(1/2) center is responsible for the carrier compensation in n-type 4H-SiC epilayers irradiated by low-energy (250 keV) electrons. The concentration of the Z(1/2) defect obtained by C-V and DLTS correlates well with that of the carbon vacancy (V-C) determined by electron paramagnetic resonance, suggesting that the Z(1/2) deep level originates from V-C. | |
| 653 | a TECHNOLOGY | |
| 653 | a TEKNIKVETENSKAP | |
| 700 | 1 | a Thang Trinh, Xuanu Linköpings universitet,Halvledarmaterial,Tekniska högskolan4 aut0 (Swepub:liu)xuatr28 |
| 700 | 1 | a Son Tien, Nguyenu Linköpings universitet,Halvledarmaterial,Tekniska högskolan4 aut0 (Swepub:liu)nguso90 |
| 700 | 1 | a Janzén, Eriku Linköpings universitet,Halvledarmaterial,Tekniska högskolan4 aut0 (Swepub:liu)erija14 |
| 700 | 1 | a Suda, Junu Kyoto University, Japan4 aut |
| 700 | 1 | a Kimoto, Tsunenobuu Kyoto University, Japan4 aut |
| 710 | 2 | a Kyoto University, Japanb Halvledarmaterial4 org |
| 773 | 0 | t Applied Physics Lettersd : American Institute of Physics (AIP)g 102:11q 102:11x 0003-6951x 1077-3118 |
| 856 | 4 | u https://repository.kulib.kyoto-u.ac.jp/dspace/bitstream/2433/187953/1/1.4796141.pdf |
| 856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-91342 |
| 856 | 4 8 | u https://doi.org/10.1063/1.4796141 |
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