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Direct experimental evidence for unusual effects of hydrogen on the electronic and vibrational properties of GaNxP1−x alloys : a proof for a general property of dilute nitrides

Buyanova, Irina, 1960- (author)
Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
Izadifard, Morteza, 1965- (author)
Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
Ivanov, Ivan Gueorguiev, 1955- (author)
Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
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Birch, Jens, 1960- (author)
Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
Chen, Weimin, 1959- (author)
Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
Felici, M. (author)
Dipartimento di Fisica, Università di Roma “La Sapienza,” Roma, Italy
Polimeni, A. (author)
Dipartimento di Fisica, Università di Roma “La Sapienza,” Roma, Italy
Capizzi, M. (author)
Dipartimento di Fisica, Università di Roma “La Sapienza,” Roma, Italy
Hong, Y. G. (author)
Department of Electrical and Computer Engineering, University of California, La Jolla, California, USA
Xin, H. P. (author)
Department of Electrical and Computer Engineering, University of California, La Jolla, California, USA
Tu, C. W. (author)
Department of Electrical and Computer Engineering, University of California, La Jolla, California, USA
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 (creator_code:org_t)
2004
2004
English.
In: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 70:24, s. 245215-245219
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • Direct experimental evidence for dramatic effects of hydrogen incorporation on the electronic structure and lattice properties of GaNxP1−x alloys is presented. By employing photoluminescence excitation spectroscopy, postgrowth hydrogenation is shown to reopen the band gap of the GaNP alloys and to efficiently reduce the N-induced coupling between the conduction band states. By Raman spectroscopy, these effects are shown to be accompanied by hydrogen-induced breaking of the Ga-P bond in the alloy, evident from disappearance of the corresponding vibrational mode. According to the performed Raman and x-ray diffraction measurements, the hydrogenation is also found to cause a strong expansion of the GaNP lattice, which changes the sign of strain from tensile in the as-grown GaNP epilayers to compressive in the posthydrogenated structures, due to the formation of complexes between N and H.

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NATURAL SCIENCES
NATURVETENSKAP

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