Photoluminescence probing of interface evolution with annealing in InGa(N)As/GaAs single quantum wells

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Shao, JunChinese Academy of Sciences (author)

Photoluminescence probing of interface evolution with annealing in InGa(N)As/GaAs single quantum wells

Article/chapterEnglish2015

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AIP Publishing,2015
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LIBRIS-ID:oai:research.chalmers.se:8e77a4cc-1ba4-410b-8e24-19d4960b9fcc
https://research.chalmers.se/publication/224849URI
https://doi.org/10.1063/1.4934523DOI

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Language:English
Summary in:English

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The effects of thermal annealing on the interfaces of InGa(N)As/GaAs single quantum wells(SQWs) are investigated by excitation-, temperature-, and magnetic field-dependent photoluminescence(PL). The annealing at 750 °C results in more significant blueshift and narrowing to the PLpeak than that at 600 °C. Each of the PL spectra can be reproduced with two PL components: (i)the low-energy component (LE) keeps energetically unchanged, while the high-energy component(HE) moves up with excitation and shows at higher energy for the In0.375Ga0.625As/GaAs butcrosses over with the LE at a medium excitation power for the In0.375Ga0.625N0.012As0.988/GaAsSQWs. The HE is broader than the corresponding LE, the annealing at 750 °C narrows the LE andHE and shrinks their energetic separation; (ii) the PL components are excitonic, and the InGaNAsshows slightly enhanced excitonic effects relative to the InGaAs SQW; (iii) no typical S-shape evolutionof PL energy with temperature is detectable, and similar blueshift and narrowing are identifiedfor the same annealing. The phenomena are mainly from the interfacial processes. Annealingimproves the intralayer quality, enhances the interfacial In-Ga interdiffusion, and reduces the interfacialfluctuation. The interfacial interdiffusion does not change obviously by the small N contentand hence similar PL-component narrowing and blueshift are observed for the SQWs after a nominallyidentical annealing. Comparison with previous studies is made and the PL measurementsunder different conditions are shown to be effective for probing the interfacial evolution in QWs.

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TEKNIK OCH TEKNOLOGIER Materialteknik hsv//swe
ENGINEERING AND TECHNOLOGY Materials Engineering hsv//eng

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Qi, ZhenChinese Academy of Sciences (author)
Zhao Ternehäll, Huan,1982Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)huanz (author)
Zhu, LiangChinese Academy of Sciences (author)
Song, Yuxin,1981Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)yuxin (author)
Chen, XChinese Academy of Sciences (author)
F.X.Zha,Shanghai University (author)
Guo, ShaolingChinese Academy of Sciences (author)
Wang, Shu Min,1963Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)shumin (author)
Chinese Academy of SciencesChalmers tekniska högskola (creator_code:org_t)

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In:Journal of Applied Physics: AIP Publishing118:16, s. 165305-0021-89791089-7550

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