SwePub
Sök i LIBRIS databas

  Utökad sökning

(WFRF:(Zhao Zhen Zhen)) hsvcat:2
 

Sökning: (WFRF:(Zhao Zhen Zhen)) hsvcat:2 > Photoluminescence p...

LIBRIS Formathandbok  (Information om MARC21)
FältnamnIndikatorerMetadata
00003703naa a2200397 4500
001oai:research.chalmers.se:8e77a4cc-1ba4-410b-8e24-19d4960b9fcc
003SwePub
008171008s2015 | |||||||||||000 ||eng|
0247 a https://research.chalmers.se/publication/2248492 URI
0247 a https://doi.org/10.1063/1.49345232 DOI
040 a (SwePub)cth
041 a engb eng
042 9 SwePub
072 7a art2 swepub-publicationtype
072 7a ref2 swepub-contenttype
1001 a Shao, Junu Chinese Academy of Sciences4 aut
2451 0a Photoluminescence probing of interface evolution with annealing in InGa(N)As/GaAs single quantum wells
264 1b AIP Publishing,c 2015
338 a electronic2 rdacarrier
520 a The effects of thermal annealing on the interfaces of InGa(N)As/GaAs single quantum wells(SQWs) are investigated by excitation-, temperature-, and magnetic field-dependent photoluminescence(PL). The annealing at 750 °C results in more significant blueshift and narrowing to the PLpeak than that at 600 °C. Each of the PL spectra can be reproduced with two PL components: (i)the low-energy component (LE) keeps energetically unchanged, while the high-energy component(HE) moves up with excitation and shows at higher energy for the In0.375Ga0.625As/GaAs butcrosses over with the LE at a medium excitation power for the In0.375Ga0.625N0.012As0.988/GaAsSQWs. The HE is broader than the corresponding LE, the annealing at 750 °C narrows the LE andHE and shrinks their energetic separation; (ii) the PL components are excitonic, and the InGaNAsshows slightly enhanced excitonic effects relative to the InGaAs SQW; (iii) no typical S-shape evolutionof PL energy with temperature is detectable, and similar blueshift and narrowing are identifiedfor the same annealing. The phenomena are mainly from the interfacial processes. Annealingimproves the intralayer quality, enhances the interfacial In-Ga interdiffusion, and reduces the interfacialfluctuation. The interfacial interdiffusion does not change obviously by the small N contentand hence similar PL-component narrowing and blueshift are observed for the SQWs after a nominallyidentical annealing. Comparison with previous studies is made and the PL measurementsunder different conditions are shown to be effective for probing the interfacial evolution in QWs.
650 7a TEKNIK OCH TEKNOLOGIERx Materialteknik0 (SwePub)2052 hsv//swe
650 7a ENGINEERING AND TECHNOLOGYx Materials Engineering0 (SwePub)2052 hsv//eng
7001 a Qi, Zhenu Chinese Academy of Sciences4 aut
7001 a Zhao Ternehäll, Huan,d 1982u Chalmers tekniska högskola,Chalmers University of Technology4 aut0 (Swepub:cth)huanz
7001 a Zhu, Liangu Chinese Academy of Sciences4 aut
7001 a Song, Yuxin,d 1981u Chalmers tekniska högskola,Chalmers University of Technology4 aut0 (Swepub:cth)yuxin
7001 a Chen, Xu Chinese Academy of Sciences4 aut
7001 a F.X.Zha,u Shanghai University4 aut
7001 a Guo, Shaolingu Chinese Academy of Sciences4 aut
7001 a Wang, Shu Min,d 1963u Chalmers tekniska högskola,Chalmers University of Technology4 aut0 (Swepub:cth)shumin
7102 a Chinese Academy of Sciencesb Chalmers tekniska högskola4 org
7730 t Journal of Applied Physicsd : AIP Publishingg 118:16, s. 165305-q 118:16<165305-x 0021-8979x 1089-7550
8564 u http://publications.lib.chalmers.se/records/fulltext/224849/local_224849.pdfx primaryx freey FULLTEXT
8564 u http://publications.lib.chalmers.se/records/fulltext/224849/local_224849.pdf
8564 8u https://research.chalmers.se/publication/224849
8564 8u https://doi.org/10.1063/1.4934523

Hitta via bibliotek

Till lärosätets databas

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

 
pil uppåt Stäng

Kopiera och spara länken för att återkomma till aktuell vy