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Structural investig...
Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization
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- Chen, Ding-Yuan, 1991 (författare)
- Chalmers University of Technology,SweGaN AB, Linkoping, Sweden; Chalmers Univ Technol, Sweden,Chalmers tekniska högskola
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- Persson, Axel (författare)
- Linköping University,Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten,C3NiT-Janzen
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- Darakchieva, Vanya (författare)
- Linköping University,Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,LTH profilområde: Nanovetenskap och halvledarteknologi,LTH profilområden,LU profilområde: Ljus och material,Lunds universitets profilområden,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,LTH Profile Area: Nanoscience and Semiconductor Technology,LTH Profile areas,Faculty of Engineering, LTH,LU Profile Area: Light and Materials,Lund University Profile areas,Center for III-Nitride Technology,Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,TheMAC, Sweden; Lund Univ, Sweden; Lund Univ, Sweden,C3NiT-Janzen
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- Persson, Per O. A. (författare)
- Linköping University,Linköpings universitet
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- Chen, Jr-Tai (författare)
- SweGaN AB, Linkoping, Sweden
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- Rorsman, Niklas, 1964 (författare)
- Chalmers University of Technology,Chalmers tekniska högskola,Chalmers Univ Technol, Sweden
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(creator_code:org_t)
- IOP Publishing Ltd, 2023
- 2023
- Engelska.
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Ingår i: Semiconductor Science and Technology. - : IOP Publishing Ltd. - 1361-6641 .- 0268-1242. ; 38:10
- Relaterad länk:
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http://dx.doi.org/10...
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https://doi.org/10.1...
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https://research.cha...
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https://lup.lub.lu.s...
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https://urn.kb.se/re...
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Abstract
Ämnesord
Stäng
- This study presents a novel approach to forming low-resistance ohmic contacts for AlGaN/GaN HEMTs. The optimized contacts exhibit an outstanding contact resistance of approximately 0.15 & omega;& BULL;mm. This is achieved by firstly recessing the barrier of the heterostructure to a depth beyond the channel. In this way, the channel region is exposed on the sidewall of the recess. The coverage of the Ti/Al/Ti ohmic metalization on the sidewall is ensured through tilting of the sample during evaporation. The annealing process is performed at a low temperature of 550 & DEG;C. The approach does not require precise control of the recess etching. Furthermore, the method is directly applicable to most barrier designs in terms of thickness and Al-concentration. The impact of recessed sidewall angle, thickness and ratio of Ti and Al layers, and the annealing procedure are investigated. Structural and chemical analyses of the interface between the ohmic contacts and epi-structure indicate the formation of ohmic contacts by the extraction of nitrogen from the epi-structure. The approach is demonstrated on HEMT-structures with two different barrier designs in terms of Al-concentration and barrier thickness. The study demonstrate large process window in regard to recess depth and duration of the annealing as well as high uniformity of the contact resistance across the samples, rendering the approach highly suitable for industrial production processes.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Materialteknik -- Annan materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering -- Other Materials Engineering (hsv//eng)
Nyckelord
- annealing temperatures
- ohmic contact
- sidewall
- recessed
- AlGaN/GaN HEMTs
- AlGaN/GaN HEMTs
- annealing temperatures
- ohmic contact
- recessed
- sidewall
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