Simulation and Measurement of Switching Characteristics of 4H-SiC Buried-Gate JFETs

• Buried-gate junction field-effect transistors (JFETs) have been fabricated in 4H polytype silicon carbide (SiC). The dynamic switching characteristics of the JFETs in a circuit with inductive load have been characterized. The drain voltage rise/fall time of ∌30 ns and 25 ns have been observed for turn-off and turn-on, respectively. The results have been compared to numerical mixed-mode circuit simulations with finite element structures.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

Junction Field Effect Transistors

Simulation

Switching

Inductive loads

Electric potential

Hydrogen

Semiconductor materials

Silicon carbide

Junction gate field effect transistors

TECHNOLOGY

Publication and Content Type

ref (subject category)

art (subject category)