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  • Hilfiker, MatthewUniv Nebraska Lincoln, NE 68588 USA (författare)

Anisotropic dielectric function, direction dependent bandgap energy, band order, and indirect to direct gap crossover in α-(AlxGa1−x)2O3 (0≤?≤10≤x≤1)

  • Artikel/kapitelEngelska2022

Förlag, utgivningsår, omfång ...

  • AIP Publishing,2022
  • printrdacarrier

Nummerbeteckningar

  • LIBRIS-ID:oai:DiVA.org:liu-187316
  • https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-187316URI
  • https://doi.org/10.1063/5.0087602DOI

Kompletterande språkuppgifter

  • Språk:engelska
  • Sammanfattning på:engelska

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Klassifikation

  • Ämneskategori:ref swepub-contenttype
  • Ämneskategori:art swepub-publicationtype

Anmärkningar

  • Funding Agencies|National Science Foundation (NSF) [NSF DMR 1808715, NSF/EPSCoR]; RII Track-1: Emergent Quantum Materials and Technologies (EQUATE) [OIA-2044049]; Air Force Office of Scientific Research [FA9550-18-1-0360, FA9550-19-S-0003, FA9550-21-1-0259]; ACCESS, an AFOSR Center of Excellence [FA9550-18-1-0529]; Knut and Alice Wallenbergs Foundation; University of Nebraska Foundation; J. A. Woollam Foundation; Japan Society for the Promotion of Science Overseas Challenge Program for Young Researchers [1080033]
  • Mueller matrix spectroscopic ellipsometry is applied to determine anisotropic optical properties for a set of single-crystal rhombohedral structure alpha-(AlxGa1-x)(2)O-3 thin films (0 <= x <= 1). Samples are grown by plasma-assisted molecular beam epitaxy on m-plane sapphire. A critical-point model is used to render a spectroscopic model dielectric function tensor and to determine direct electronic band-to-band transition parameters, including the direction dependent two lowest-photon energy band-to-band transitions associated with the anisotropic bandgap. We obtain the composition dependence of the direction dependent two lowest band-to-band transitions with separate bandgap bowing parameters associated with the perpendicular (b(Eg,⊥) = 1.31 eV) and parallel (b(Eg,||) = 1.61 eV) electric field polarization to the lattice c direction. Our density functional theory calculations indicate a transition from indirect to direct characteristics between alpha-Ga2O3 and alpha-Al2O3, respectively, and we identify a switch in band order where the lowest band-to-band transition occurs with polarization perpendicular to c in alpha-Ga2O3 whereas for alpha-Al2O3 the lowest transition occurs with polarization parallel to c. We estimate that the change in band order occurs at approximately 40% Al content. Additionally, the characteristic of the lowest energy critical point transition for polarization parallel to c changes from M-1 type in alpha-Ga2O3 to M-0 type van Hove singularity in alpha-Al2O3.

Ämnesord och genrebeteckningar

Biuppslag (personer, institutioner, konferenser, titlar ...)

  • Kilic, UfukUniv Nebraska Lincoln, NE 68588 USA (författare)
  • Stokey, MeganUniv Nebraska Lincoln, NE 68588 USA (författare)
  • Jinno, RienaCornell Univ, NY 14853 USA; Kyoto Univ, Japan (författare)
  • Cho, YongjinCornell Univ, NY 14853 USA (författare)
  • Xing, Huili GraceCornell Univ, NY 14853 USA; Cornell Univ, NY 14853 USA (författare)
  • Jena, DebdeepCornell Univ, NY 14853 USA; Cornell Univ, NY 14853 USA (författare)
  • Korlacki, RafalUniv Nebraska Lincoln, NE 68588 USA (författare)
  • Schubert, MathiasLinköpings universitet,Halvledarmaterial,Tekniska fakulteten,Univ Nebraska Lincoln, NE 68588 USA,Centre for III-nitride technology (C3NiT)(Swepub:liu)schma39 (författare)
  • Univ Nebraska Lincoln, NE 68588 USACornell Univ, NY 14853 USA; Kyoto Univ, Japan (creator_code:org_t)

Sammanhörande titlar

  • Ingår i:Applied Physics Letters: AIP Publishing121:50003-69511077-3118

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