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Anisotropic dielect...
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Hilfiker, MatthewUniv Nebraska Lincoln, NE 68588 USA
(författare)
Anisotropic dielectric function, direction dependent bandgap energy, band order, and indirect to direct gap crossover in α-(AlxGa1−x)2O3 (0≤?≤10≤x≤1)
- Artikel/kapitelEngelska2022
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AIP Publishing,2022
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Nummerbeteckningar
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LIBRIS-ID:oai:DiVA.org:liu-187316
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-187316URI
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https://doi.org/10.1063/5.0087602DOI
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Språk:engelska
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Sammanfattning på:engelska
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Ämneskategori:ref swepub-contenttype
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Ämneskategori:art swepub-publicationtype
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Funding Agencies|National Science Foundation (NSF) [NSF DMR 1808715, NSF/EPSCoR]; RII Track-1: Emergent Quantum Materials and Technologies (EQUATE) [OIA-2044049]; Air Force Office of Scientific Research [FA9550-18-1-0360, FA9550-19-S-0003, FA9550-21-1-0259]; ACCESS, an AFOSR Center of Excellence [FA9550-18-1-0529]; Knut and Alice Wallenbergs Foundation; University of Nebraska Foundation; J. A. Woollam Foundation; Japan Society for the Promotion of Science Overseas Challenge Program for Young Researchers [1080033]
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Mueller matrix spectroscopic ellipsometry is applied to determine anisotropic optical properties for a set of single-crystal rhombohedral structure alpha-(AlxGa1-x)(2)O-3 thin films (0 <= x <= 1). Samples are grown by plasma-assisted molecular beam epitaxy on m-plane sapphire. A critical-point model is used to render a spectroscopic model dielectric function tensor and to determine direct electronic band-to-band transition parameters, including the direction dependent two lowest-photon energy band-to-band transitions associated with the anisotropic bandgap. We obtain the composition dependence of the direction dependent two lowest band-to-band transitions with separate bandgap bowing parameters associated with the perpendicular (b(Eg,⊥) = 1.31 eV) and parallel (b(Eg,||) = 1.61 eV) electric field polarization to the lattice c direction. Our density functional theory calculations indicate a transition from indirect to direct characteristics between alpha-Ga2O3 and alpha-Al2O3, respectively, and we identify a switch in band order where the lowest band-to-band transition occurs with polarization perpendicular to c in alpha-Ga2O3 whereas for alpha-Al2O3 the lowest transition occurs with polarization parallel to c. We estimate that the change in band order occurs at approximately 40% Al content. Additionally, the characteristic of the lowest energy critical point transition for polarization parallel to c changes from M-1 type in alpha-Ga2O3 to M-0 type van Hove singularity in alpha-Al2O3.
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Biuppslag (personer, institutioner, konferenser, titlar ...)
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Kilic, UfukUniv Nebraska Lincoln, NE 68588 USA
(författare)
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Stokey, MeganUniv Nebraska Lincoln, NE 68588 USA
(författare)
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Jinno, RienaCornell Univ, NY 14853 USA; Kyoto Univ, Japan
(författare)
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Cho, YongjinCornell Univ, NY 14853 USA
(författare)
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Xing, Huili GraceCornell Univ, NY 14853 USA; Cornell Univ, NY 14853 USA
(författare)
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Jena, DebdeepCornell Univ, NY 14853 USA; Cornell Univ, NY 14853 USA
(författare)
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Korlacki, RafalUniv Nebraska Lincoln, NE 68588 USA
(författare)
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Schubert, MathiasLinköpings universitet,Halvledarmaterial,Tekniska fakulteten,Univ Nebraska Lincoln, NE 68588 USA,Centre for III-nitride technology (C3NiT)(Swepub:liu)schma39
(författare)
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Univ Nebraska Lincoln, NE 68588 USACornell Univ, NY 14853 USA; Kyoto Univ, Japan
(creator_code:org_t)
Sammanhörande titlar
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Ingår i:Applied Physics Letters: AIP Publishing121:50003-69511077-3118
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