Sökning: WFRF:(Wahab Qamar) > (2010-2014) > Study of electric f...
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000 | 03422naa a2200373 4500 | |
001 | oai:DiVA.org:liu-63959 | |
003 | SwePub | |
008 | 110110s2010 | |||||||||||000 ||eng| | |
024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-639592 URI |
024 | 7 | a https://doi.org/10.1063/1.34996692 DOI |
040 | a (SwePub)liu | |
041 | a engb eng | |
042 | 9 SwePub | |
072 | 7 | a ref2 swepub-contenttype |
072 | 7 | a art2 swepub-publicationtype |
100 | 1 | a Ashraf, H.u Radboud University Nijmegen4 aut |
245 | 1 0 | a Study of electric field enhanced emission rates of an electron trap in n-type GaN grown by hydride vapor phase epitaxy |
264 | 1 | b American Institute of Physics,c 2010 |
338 | a electronic2 rdacarrier | |
500 | a Original Publication: H. Ashraf, M. Imran Arshad, Sadia Muniza Faraz, Qamar Ul Wahab, P. R. Hageman and M. Asghar, Study of electric field enhanced emission rates of an electron trap in n-type GaN grown by hydride vapor phase epitaxy, 2010, Journal of Applied Physics, (108), 10, 103708. http://dx.doi.org/10.1063/1.3499669 Copyright: American Institute of Physics http://www.aip.org/ | |
520 | a Electric field-enhanced emission of electrons from a deep level defect in GaN grown by hydride vapor phase epitaxy has been studied. Using the field dependent mode of conventional deep level transient spectroscopy (DLTS), several frequency scans were performed keeping applied electric field (12.8-31.4 MV/m) and sample temperature (300-360 K) constant. Arrhenius plots of the resultant data yielded an activation energy of the electron trap E ranging from E-c -0.48 +/- 0.02 eV to E-c-0.35 +/- 0.02 eV, respectively. The extrapolation of the as-measured field dependent data (activation energy) revealed the zero-field emission energy (pure thermal activation energy) of the trap to be 0.55 +/- 0.02 eV. Various theoretical models were applied to justify the field-enhanced emission of the carriers from the trap. Eventually it was found that the Poole-Frenkel model associated with a square well potential of radius r=4.8 nm was consistent with the experimental data, and, as a result, the trap is attributed to a charged impurity. Earlier, qualitative measurements like current-voltage (I-V) and capacitance-voltage (C-V) measurements were performed, and screening parameters of the device were extracted to ascertain the reliability of DLTS data. | |
653 | a TECHNOLOGY | |
653 | a TEKNIKVETENSKAP | |
700 | 1 | a Imran Arshad, M.u Islamia University Bahawalpur4 aut |
700 | 1 | a Muniza Faraz, Sadiau Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan4 aut0 (Swepub:liu)sadfa20 |
700 | 1 | a Ul Wahab, Qamaru Linköpings universitet,Halvledarmaterial,Tekniska högskolan4 aut0 (Swepub:liu)qamwa17 |
700 | 1 | a Hageman, P. R.u Radboud University Nijmegen4 aut |
700 | 1 | a Asghar, M.u Islamia University Bahawalpur4 aut |
710 | 2 | a Radboud University Nijmegenb Islamia University Bahawalpur4 org |
773 | 0 | t Journal of Applied Physicsd : American Institute of Physicsg 108:10q 108:10x 0021-8979x 1089-7550 |
856 | 4 | u https://liu.diva-portal.org/smash/get/diva2:384496/FULLTEXT01.pdfx primaryx Raw objecty fulltext:print |
856 | 4 | u https://repository.ubn.ru.nl/bitstream/2066/84005/1/84005.pdf |
856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-63959 |
856 | 4 8 | u https://doi.org/10.1063/1.3499669 |
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