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WFRF:(Wahab Qamar)
 

Sökning: WFRF:(Wahab Qamar) > (2010-2014) > Study of electric f...

LIBRIS Formathandbok  (Information om MARC21)
FältnamnIndikatorerMetadata
00003422naa a2200373 4500
001oai:DiVA.org:liu-63959
003SwePub
008110110s2010 | |||||||||||000 ||eng|
024a https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-639592 URI
024a https://doi.org/10.1063/1.34996692 DOI
040 a (SwePub)liu
041 a engb eng
042 9 SwePub
072 7a ref2 swepub-contenttype
072 7a art2 swepub-publicationtype
100a Ashraf, H.u Radboud University Nijmegen4 aut
2451 0a Study of electric field enhanced emission rates of an electron trap in n-type GaN grown by hydride vapor phase epitaxy
264 1b American Institute of Physics,c 2010
338 a electronic2 rdacarrier
500 a Original Publication: H. Ashraf, M. Imran Arshad, Sadia Muniza Faraz, Qamar Ul Wahab, P. R. Hageman and M. Asghar, Study of electric field enhanced emission rates of an electron trap in n-type GaN grown by hydride vapor phase epitaxy, 2010, Journal of Applied Physics, (108), 10, 103708. http://dx.doi.org/10.1063/1.3499669 Copyright: American Institute of Physics http://www.aip.org/
520 a Electric field-enhanced emission of electrons from a deep level defect in GaN grown by hydride vapor phase epitaxy has been studied. Using the field dependent mode of conventional deep level transient spectroscopy (DLTS), several frequency scans were performed keeping applied electric field (12.8-31.4 MV/m) and sample temperature (300-360 K) constant. Arrhenius plots of the resultant data yielded an activation energy of the electron trap E ranging from E-c -0.48 +/- 0.02 eV to E-c-0.35 +/- 0.02 eV, respectively. The extrapolation of the as-measured field dependent data (activation energy) revealed the zero-field emission energy (pure thermal activation energy) of the trap to be 0.55 +/- 0.02 eV. Various theoretical models were applied to justify the field-enhanced emission of the carriers from the trap. Eventually it was found that the Poole-Frenkel model associated with a square well potential of radius r=4.8 nm was consistent with the experimental data, and, as a result, the trap is attributed to a charged impurity. Earlier, qualitative measurements like current-voltage (I-V) and capacitance-voltage (C-V) measurements were performed, and screening parameters of the device were extracted to ascertain the reliability of DLTS data.
653 a TECHNOLOGY
653 a TEKNIKVETENSKAP
700a Imran Arshad, M.u Islamia University Bahawalpur4 aut
700a Muniza Faraz, Sadiau Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan4 aut0 (Swepub:liu)sadfa20
700a Ul Wahab, Qamaru Linköpings universitet,Halvledarmaterial,Tekniska högskolan4 aut0 (Swepub:liu)qamwa17
700a Hageman, P. R.u Radboud University Nijmegen4 aut
700a Asghar, M.u Islamia University Bahawalpur4 aut
710a Radboud University Nijmegenb Islamia University Bahawalpur4 org
773t Journal of Applied Physicsd : American Institute of Physicsg 108:10q 108:10x 0021-8979x 1089-7550
856u https://liu.diva-portal.org/smash/get/diva2:384496/FULLTEXT01.pdfx primaryx Raw objecty fulltext:print
856u https://repository.ubn.ru.nl/bitstream/2066/84005/1/84005.pdf
8564 8u https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-63959
8564 8u https://doi.org/10.1063/1.3499669

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