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LIBRIS Formathandbok  (Information om MARC21)
FältnamnIndikatorerMetadata
00003562naa a2200397 4500
001oai:research.chalmers.se:5f54e224-28b1-42fe-b5fa-3ee1001c43d2
003SwePub
008240523s2024 | |||||||||||000 ||eng|
024a https://research.chalmers.se/publication/5412622 URI
024a https://doi.org/10.1088/2053-1583/ad4b362 DOI
040 a (SwePub)cth
041 a engb eng
042 9 SwePub
072 7a art2 swepub-publicationtype
072 7a ref2 swepub-contenttype
100a Khan, Munis,d 1991u Chalmers tekniska högskola,Chalmers University of Technology4 aut0 (Swepub:cth)munis
2451 0a High mobility graphene field effect transistors on flexible EVA/PET foils
264 1c 2024
338 a electronic2 rdacarrier
520 a Monolayer graphene is a promising material for a wide range of applications, including sensors, optoelectronics, antennas, EMR shielding, flexible electronics, and conducting electrodes. Chemical vapor deposition (CVD) of carbon atoms on a metal catalyst is the most scalable and cost-efficient method for synthesizing high-quality, large-area monolayer graphene. The usual method of transferring the CVD graphene from the catalyst to a target substrate involves a polymer carrier which is dissolved after the transfer process is completed. Due to often unavoidable damage to graphene, as well as contamination and residues, carrier mobilities are typically 1000–3000 cm2(Vs)−1, unless complex and elaborate measures are taken. Here, we report on a simple scalable fabrication method for flexible graphene field-effect transistors that eliminates the polymer interim carrier, by laminating the graphene directly onto office lamination foils, removing the catalyst, and depositing Parylene N as a gate dielectric and encapsulation layer. The fabricated transistors show field- and Hall-effect mobilities of 7000–10 000 cm2(Vs)−1 with a residual charge-carrier density of 2×1011 1 cm−2 at room temperature. We further validate the material quality by terahertz time-domain spectroscopy and observation of the quantum Hall effect at low temperatures in a moderate magnetic field of ∼5 T. The Parylene encapsulation provides long-term stability and protection against additional lithography steps, enabling vertical device integration in multilayer electronics on a flexible platform.
650 7a NATURVETENSKAPx Fysikx Den kondenserade materiens fysik0 (SwePub)103042 hsv//swe
650 7a NATURAL SCIENCESx Physical Sciencesx Condensed Matter Physics0 (SwePub)103042 hsv//eng
653 a flexible substrates
653 a CVD
653 a field-effect transistor
653 a graphene
700a Ji, Jieu Danmarks Tekniske Universitet,Technical University of Denmark4 aut
700a Zhou, Binbinu Danmarks Tekniske Universitet,Technical University of Denmark4 aut
700a Jepsen, Peter U.u Danmarks Tekniske Universitet,Technical University of Denmark4 aut
700a Boggild, Peteru Danmarks Tekniske Universitet,Technical University of Denmark4 aut
700a Yurgens, Avgust,d 1959u Chalmers tekniska högskola,Chalmers University of Technology4 aut0 (Swepub:cth)yurgens
710a Chalmers tekniska högskolab Danmarks Tekniske Universitet4 org
773t 2D Materialsg 11:3q 11:3x 2053-1583
856u https://research.chalmers.se/publication/541336/file/541336_Fulltext.pdfx primaryx freey FULLTEXT
8564 8u https://research.chalmers.se/publication/541262
8564 8u https://doi.org/10.1088/2053-1583/ad4b36

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