(LAR1:liu) pers:(Syväjärvi Mikael)
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- Beshkova, MilenaLinköpings universitet,Halvledarmaterial,Tekniska högskolan (author)
Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates
- Article/chapterEnglish2010
Publisher, publication year, extent ...
- Transtec Publications; 1999,2010
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- LIBRIS-ID:oai:DiVA.org:liu-58208
- https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-58208URI
- https://doi.org/10.4028/www.scientific.net/MSF.645-648.183DOI
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- Language:English
- Summary in:English
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Notes
- 3C-SiC layers have been grown by using sublimation epitaxy at a temperature of 2000 degrees C, on different types of on-axis 6H-SiC(0001) substrates. The influence of the type of substrate on the morphology of the layers investigated by Atomic Force Microscopy (AFM) is discussed. Stacking faults are studied by reciprocal space map (RSM) which shows that double positions domains exists.
Subject headings and genre
- 3C-SiC; Sublimation Epitaxy; morphology; AFM; HRXRD
- TECHNOLOGY
- TEKNIKVETENSKAP
Added entries (persons, corporate bodies, meetings, titles ...)
- Lorenzzi, J.UMR-CNRS (author)
- Jegenyes, N.UMR-CNRS (author)
- Birch, JensLinköpings universitet,Tunnfilmsfysik,Tekniska högskolan(Swepub:liu)jenbi91 (author)
- Syväjärvi, MikaelLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)miksy08 (author)
- Ferro, G.UMR-CNRS (author)
- Yakimova, RositsaLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)rosia15 (author)
- Linköpings universitetHalvledarmaterial (creator_code:org_t)
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- In:Materials Science Forum, Vols. 645-648: Transtec Publications; 1999, s. 183-186
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