L773:0003 6951 OR L773:1077 3118
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Hydrogen passivation of silicon carbide by low-energy ion implantation
- Achtziger, N (author)
- Grillenberger, J (author)
- Witthuhn, W (author)
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- Janson, M S (author)
- Svensson, B G (author)
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- (creator_code:org_t)
- AIP Publishing, 1998
- 1998
- English.
- In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 73, s. 945-947
- Journal article (peer-reviewed)
Abstract
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- implantation of deuterium is performed to investigate the mobility and passivating effect of hydrogen in epitaxial alpha-SiC (polytypes 4H and 6H). To avoid excessive damage and the resulting trapping of hydrogen, the implantation is performed with low energy (600 eV H-2(2)+). The H-2 depth profile is analyzed by secondary ion mass spectrometry. Electrical properties are measured by capacitance-voltage profiling and admittance spectroscopy. In p-type SIG, hydrogen diffuses on a mu m scale even at room temperature and effectively passivates accepters. In n-type SiC, the incorporation of H is suppressed and no passivation is detected. (C) 1998 American Institute of Physics.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
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- Achtziger, N
- Grillenberger, J
- Witthuhn, W
- Linnarsson, M K
- Janson, M S
- Svensson, B G
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