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Transfer-free, lithography-free, and micrometer-precision patterning of CVD graphene on SiO 2 toward all-carbon electronics

Dong, Y. B. (author)
Beijing University of Technology
Xie, Yiyang (author)
Beijing University of Technology
Xu, C. (author)
Beijing University of Technology
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Li, X. J. (author)
Beijing University of Technology
Deng, Jun (author)
Beijing University of Technology
Fan, X. (author)
Beijing University of Technology
Pan, G. Z. (author)
Beijing University of Technology
Wang, Qiuhua (author)
Beijing University of Technology
Xiong, Fangzhu (author)
Beijing University of Technology
Fu, Yafei (author)
Beijing University of Technology
Sun, Jie, 1977 (author)
Beijing University of Technology,Chalmers tekniska högskola,Chalmers University of Technology
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 (creator_code:org_t)
AIP Publishing, 2018
2018
English.
In: APL Materials. - : AIP Publishing. - 2166-532X. ; 6:2
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • A method of producing large area continuous graphene directly on SiO 2 by chemical vapor deposition is systematically developed. Cu thin film catalysts are sputtered onto the SiO 2 and pre-patterned. During graphene deposition, high temperature induces evaporation and balling of the Cu, and the graphene "lands onto" SiO 2 . Due to the high heating and growth rate, continuous graphene is largely completed before the Cu evaporation and balling. 60 nm is identified as the optimal thickness of the Cu for a successful graphene growth and μm-large feature size in the graphene. An all-carbon device is demonstrated based on this technique.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Materialteknik -- Annan materialteknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Materials Engineering -- Other Materials Engineering (hsv//eng)
NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

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art (subject category)
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