A 110-170-GHz Multi-Mode Transconductance Mixer in 250-nm InP DHBT Technology

Yan, Yu, 1984 (author): Chalmers tekniska högskola,Chalmers University of Technology

Gunnarsson, Sten, 1976 (author): Chalmers tekniska högskola,Chalmers University of Technology

Vassilev, Vessen, 1969 (author): Chalmers tekniska högskola,Chalmers University of Technology

Zirath, Herbert, 1955 (author): Chalmers tekniska högskola,Chalmers University of Technology

(creator_code:org_t)

2015
2015
English.
In: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 63:9, s. 2897-2904

Related links:: http://dx.doi.org/10...; show more...; https://doi.org/10.1...; https://research.cha...; show less...

Abstract Subject headings

A novel full D-band (110-170 GHz) multi-mode transconductance down-converter mixer is realized in a 250-nm indium phosphide double heterojunction bipolar transistor technology. A single-balanced topology is chosen and an active power combiner for the RF and the local oscillator (LO) signals’ combination is used. The designed mixer is feasible to work at ×1, ×2, ×3, ×4 subharmonically LO-pumped mixing modes with relatively low LO powers of 0, -1, 5, and 6 dBm, respectively. The measured conversion gain achieves typical values of -3, -1, -5, and -4 dB over the full D-band while the best noise figures of 12, 13.5, 18.5, and 19 dB are obtained, respectively. Through the multi-mode operation in terms of subharmonic LO-pump-frequency, the designer can make a trade-off between LO frequency, LO power, and noise figure.

By the author/editor: Yan, Yu, 1984; Bao, Mingquang, ...; Gunnarsson, Sten ...; Vassilev, Vessen ...; Zirath, Herbert, ...

About the subject

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