50-830 MHz noise and distortion canceling CMOS low noise amplifier

Ramzan, Rashad (författare): United Arab Emirates University, U Arab Emirates

Wahab, Qamar-ul, 1955- (författare): Linköpings universitet,Tekniska fakulteten,Halvledarmaterial

(creator_code:org_t)

Elsevier, 2018
2018
Engelska.
Ingår i: Integration. - : Elsevier. - 0167-9260 .- 1872-7522. ; 60, s. 63-73

Relaterad länk:: https://urn.kb.se/re...; visa fler...; https://doi.org/10.1...; visa färre...

Abstract Ämnesord

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In this paper, a modified resistive shunt feedback topology is proposed that performs noise cancelation and serves as an opposite polarity non-linearity generator to cancel the distortion produced by the main stage. The proposed topology has a bandwidth similar to a resistive shunt feedback LNA, but with a superior noise figure (NF) and linearity. The proposed wideband LNA is fabricated in 130 nm CMOS technology and occupies an area of 0.5 mm(2). Measured results depict 3-dB bandwidth from 50 to 830 MHz. The measured gain and NF at 420 MHz are 17 dB and 2.2 dB, respectively. The high value of the 1/f noise is one of the key problems in low frequency CMOS designs. The proposed topology also addresses this challenge and a low NF is attained at low frequencies. Measured 811 and S22 are better than -8.9 dB and -8.5 dB, respectively within the 0.05-1 GHz band. The 1-dB compression point is -11.5 dBm at 700 MHz, while the IIP3 is -6.3 dBm. The forward core consumes 14 mW from a 1.8 V supply. This LNA is suitable for VHF and UHF SDR communication receivers.

Av författaren/redakt...: Arshad, Sana; Ramzan, Rashad; Wahab, Qamar-ul, ...

Om ämnet

TEKNIK OCH TEKNOLOGIER: TEKNIK OCH TEKNO ...; och Elektroteknik oc ...; och Signalbehandling

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