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A 474 GHz HBV Frequ...
A 474 GHz HBV Frequency Quintupler Integrated on a 20 µm Thick Silicon Substrate
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- Malko, Aleksandra, 1984 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Bryllert, Tomas, 1974 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Vukusic, Josip, 1972 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Stake, Jan, 1971 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- 2015
- 2015
- English.
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In: IEEE Transactions on Terahertz Science and Technology. - 2156-342X .- 2156-3446. ; 5:1, s. 85-91
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Abstract
Subject headings
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- We present a silicon integrated Heterostructure Barrier Varactor (HBV) frequency quintupler (x5) operating between 440 GHz and 490 GHz. By epitaxial transfer of InP-based HBV material structure onto silicon-on-insulator (SOI), a uniform and accurate thickness (20 µm) of the frequency quintupler chip is achieved. In a single stage this device delivers 2.8 mW of output power at 474 GHz, when pumped with 400 mW at 94.75 GHz, corresponding to conversion efficiency of 0.75%. The present device exhibits a 3-dB bandwidth of 4%.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- submillimetre waves
- epitaxial transfer
- frequency multipliers
- heterostructure barrier varactors
- Compound semiconductors
- wafer bonding
- THz sources
- monolithic integrated circuits
- submillimeter wave diodes
Publication and Content Type
- art (subject category)
- ref (subject category)
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