A 474 GHz HBV Frequency Quintupler Integrated on a 20 µm Thick Silicon Substrate

Malko, Aleksandra, 1984 (author): Chalmers tekniska högskola,Chalmers University of Technology

Bryllert, Tomas, 1974 (author): Chalmers tekniska högskola,Chalmers University of Technology

Vukusic, Josip, 1972 (author): Chalmers tekniska högskola,Chalmers University of Technology

Stake, Jan, 1971 (author): Chalmers tekniska högskola,Chalmers University of Technology

(creator_code:org_t)

2015
2015
English.
In: IEEE Transactions on Terahertz Science and Technology. - 2156-342X .- 2156-3446. ; 5:1, s. 85-91

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Abstract Subject headings

We present a silicon integrated Heterostructure Barrier Varactor (HBV) frequency quintupler (x5) operating between 440 GHz and 490 GHz. By epitaxial transfer of InP-based HBV material structure onto silicon-on-insulator (SOI), a uniform and accurate thickness (20 µm) of the frequency quintupler chip is achieved. In a single stage this device delivers 2.8 mW of output power at 474 GHz, when pumped with 400 mW at 94.75 GHz, corresponding to conversion efficiency of 0.75%. The present device exhibits a 3-dB bandwidth of 4%.

TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

By the author/editor: Malko, Aleksandr ...; Bryllert, Tomas, ...; Vukusic, Josip, ...; Stake, Jan, 1971

About the subject

ENGINEERING AND TECHNOLOGY: ENGINEERING AND ...; and Electrical Engin ...; and Other Electrical ...

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