Stable multidomain structures formed in the process of magnetization reversal in GaMnAs ferromagnetic semiconductor thin films

• The process of magnetization reversal in ferromagnetic Ga(1-x)MnxAs epilayers has been systematically investigated using the planar Hall effect (PHE). Interestingly, we have observed a pronounced asymmetry in the PHE hysteresis when the range of the field scan is restricted to fields below the final magnetization transition. The observed behavior indicates that (a)A multidomain structures are formed as M undergoes a reorientation, (b) the domain landscape formed in this way remains stable even after the magnetic field is switched off, and (c) the reorientation of magnetization directions corresponding to the transition points in PHE takes place separately within each domain. © 2007 The American Physical Society.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

Ferromagnetic materials

Hall effect

Hysteresis

Magnetic fields

Magnetization

Multidomain structures

Planar Hall effect (PHE)

Reorientation

Thin films

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