L773:0003 6951 OR L773:1077 3118
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Reversible hydrogen annealing of metal‐oxide‐silicon carbide devices at high temperatures
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- Baranzahi, Amir (author)
- Linköpings universitet,Tillämpad Fysik,Tekniska högskolan
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- Lloyd Spetz, Anita (author)
- Linköpings universitet,Tillämpad Fysik,Tekniska högskolan
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- Lundström, Ingemar (author)
- Linköpings universitet,Tillämpad Fysik,Tekniska högskolan
- (creator_code:org_t)
- American Institute of Physics (AIP), 1995
- 1995
- English.
- In: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 67:21, s. 3203-3205
- Journal article (peer-reviewed)
Abstract
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- We report on a reversible hydrogen annealing effect observed in platinum-silicon dioxide-silicon carbide structures at temperatures above about 650 degrees C. It appears as a decrease of the inversion capacitance in the presence of hydrogen. This phenomenon is shown to depend on hydrogen atoms, created on the catalytic metal, that pass through the oxide and interact with charge generation sites at the oxide-silicon carbide interface. The consequence of the observation for chemical sensors based on silicon carbide is discussed. The results are phenomenological, since no details of the annealing chemistry could be developed from the present experiments. We find, however, that the annealing process and its reversal have activation energies of about 0.9 eV and 2.9 eV/site,respectively.
Keyword
- TECHNOLOGY
- TEKNIKVETENSKAP
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- art (subject category)
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