Determination of the low-temperature self-diffusion coefficient in solid p-H-2 from creep experiments

• Dependencies of the relative elongation epsilon under the constantly applied stress at T = 1.8 K on the endurance time t of polycrystalline parahydrogen (p-H-2, similar to 0.2% of o-H-2) of high purity (99.9999 mol.%), with varying deuterium content, were measured. The region of linear dependence between the measured creep rates (epsilon) over dot of samples and the applied stress s was revealed. The conclusion that the low-temperature creep of the studied p-H-2 possesses a vacancy-type diffusion character was made on the basis of linear dependence (epsilon) over dot similar to s. Determination of the low-temperature self-diffusion coefficient of vacancies D in solid p-H-2, which characterizes the rate of low-temperature mass transfer, was performed. The cases of migration of vacancies in the crystal bulk, along boundaries separating individual crystallites, as well as between dislocations existing in crystals, are considered. A significant decrease in the (epsilon) over dot and D values with an increase in the isotope concentration in the samples was observed, while maintaining the linear relationship between (epsilon) over dot and s for the studied p-H-2. Published by AIP Publishing.

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