WFRF:(Fager Hanna)
Sökning: WFRF:(Fager Hanna) > Hf-Al-Si-N multilay...
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| Fältnamn | Indikatorer | Metadata |
|---|---|---|
| 000 | 02996nam a2200313 4500 | |
| 001 | oai:DiVA.org:liu-106575 | |
| 003 | SwePub | |
| 008 | 140512s2014 | |||||||||||000 ||eng| | |
| 024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-1065752 URI |
| 040 | a (SwePub)liu | |
| 041 | a engb eng | |
| 042 | 9 SwePub | |
| 072 | 7 | a vet2 swepub-contenttype |
| 072 | 7 | a ovr2 swepub-publicationtype |
| 100 | 1 | a Fager, Hannau Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan4 aut0 (Swepub:liu)hanfa36 |
| 245 | 1 0 | a Hf-Al-Si-N multilayers deposited by reactive magnetron sputtering from a single Hf0.6Al0.2Si0.2 target using high-flux, low-energy modulated substrate bias :b film growth and properties |
| 264 | 1 | c 2014 |
| 338 | a print2 rdacarrier | |
| 520 | a Hf1−x−yAlxSiyN (0≤x≤0.14, 0≤y≤0.13) single layers and multilayer films are grown on Si(001) at a substrate temperature Ts=250 °C using ultrahigh vacuum magnetically-unbalanced reactive magnetron sputtering from a single Hf0.6Al0.2Si0.2 target in a 5%-N2/Ar atmosphere at a total pressure of 20 mTorr (2.67 Pa). The composition and nanostructure of Hf1−x−yAlxSiyN is controlled during growth by varying the ion energy (Ei) of the ions incident at the film surface, keeping the ion-to-metal flux ratio (Ji/JMe) constant at 8. By sequentially switching Ei between 10 and 40 eV, Hf0.77Al0.10Si0.13N/Hf0.78Al0.14Si0.08N multilayers with bilayer periods Λ = 2-20 nm are grown, in which the Si2p bonding state changes from predominantly Si-Si bonds for films grown at Ei = 10 eV, to mainly Si-N bonds at Ei = 40 eV. Multilayer hardness values increase monotonically from 20 GPa with Λ = 20 nm to 27 GPa with Λ = 2 nm, while multilayer fracture toughness increases with increasing Λ. Multilayers with Λ = 10 nm have the optimized property combination of being bothrelatively hard, H∼24 GPa, and fracture tough. | |
| 700 | 1 | a Howe, B.M.u Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Ohio, USA4 aut |
| 700 | 1 | a Greczynski, Grzegorzu Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan4 aut0 (Swepub:liu)grzgr49 |
| 700 | 1 | a Jensen, Jensu Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan4 aut0 (Swepub:liu)jenje80 |
| 700 | 1 | a Mei, A. R. B.u Frederick Seitz Materials Research Laboratory and Materials Science Department, University of Illinois, USA4 aut |
| 700 | 1 | a Lu, Junu Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan4 aut0 (Swepub:liu)junlu07 |
| 700 | 1 | a Greene, J.E.u Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan4 aut0 (Swepub:liu)josgr17 |
| 700 | 1 | a Petrov, Ivanu Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan4 aut0 (Swepub:liu)ivape26 |
| 700 | 1 | a Hultman, Larsu Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan4 aut0 (Swepub:liu)larhu75 |
| 710 | 2 | a Linköpings universitetb Tunnfilmsfysik4 org |
| 856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-106575 |
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- Fager, Hanna
- Howe, B.M.
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- Mei, A. R. B.
- Lu, Jun
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- Greene, J.E.
- Petrov, Ivan
- Hultman, Lars
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