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Transfer-free, lithography-free and fast growth of patterned CVD graphene directly on insulators by using sacrificial metal catalyst

Dong, Yibo (author)
Beijing University of Technology
Xie, Yiyang (author)
Beijing University of Technology
Xu, Chen (author)
Beijing University of Technology
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Fu, Yafei (author)
Beijing University of Technology
Fan, Xing (author)
Beijing University of Technology
Li, Xuejian (author)
Beijing University of Technology
Wang, Le (author)
Beijing University of Technology
Xiong, Fangzhu (author)
Beijing University of Technology
Guo, Weiling (author)
Beijing University of Technology
Pan, Guanzhong (author)
Beijing University of Technology
Wang, Qiuhua (author)
Beijing University of Technology
Qian, Fengsong (author)
Beijing University of Technology
Sun, Jie, 1977 (author)
Beijing University of Technology,Chalmers tekniska högskola,Chalmers University of Technology
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 (creator_code:org_t)
2018-06-28
2018
English.
In: Nanotechnology. - : IOP Publishing. - 1361-6528 .- 0957-4484. ; 29:36
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • Chemical vapor deposited graphene suffers from two problems: transfer from metal catalysts to insulators, and photoresist induced degradation during patterning. Both result in macroscopic and microscopic damages such as holes, tears, doping, and contamination, translated into property and yield dropping. We attempt to solve the problems simultaneously. A nickel thin film is evaporated on SiO2 as a sacrificial catalyst, on which surface graphene is grown. A polymer (PMMA) support is spin-coated on the graphene. During the Ni wet etching process, the etchant can permeate the polymer, making the etching efficient. The PMMA/graphene layer is fixed on the substrate by controlling the surface morphology of Ni film during the graphene growth. After etching, the graphene naturally adheres to the insulating substrate. By using this method, transfer-free, lithography-free and fast growth of graphene realized. The whole experiment has good repeatability and controllability. Compared with graphene transfer between substrates, here, no mechanical manipulation is required, leading to minimal damage. Due to the presence of Ni, the graphene quality is intrinsically better than catalyst-free growth. The Ni thickness and growth temperature are controlled to limit the number of layers of graphene. The technology can be extended to grow other two-dimensional materials with other catalysts.

Subject headings

NATURVETENSKAP  -- Kemi -- Polymerkemi (hsv//swe)
NATURAL SCIENCES  -- Chemical Sciences -- Polymer Chemistry (hsv//eng)
NATURVETENSKAP  -- Kemi -- Materialkemi (hsv//swe)
NATURAL SCIENCES  -- Chemical Sciences -- Materials Chemistry (hsv//eng)
NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

graphene
transfer-free
insulating substrate
chemical vapor deposition
lithography-free

Publication and Content Type

art (subject category)
ref (subject category)

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