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Influence of Swift ...
Influence of Swift Heavy Ion Irradiation on the Photoluminescence of Si-nanoparticles and Defects in SiO2
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- Chulapakorn, Thawatchart, 1988- (författare)
- Uppsala universitet,Tillämpad kärnfysik,Ion Physics
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- Sychugov, Ilya (författare)
- KTH,Material- och nanofysik,Royal Institute of Technology (KTH), Department of Materials and Nano Physics, SE-164 40 Kista, Sweden
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- Suvanam, Sethu Saveda (författare)
- KTH,Skolan för informations- och kommunikationsteknik (ICT),Royal Institute of Technology (KTH), School of Information and Communication Technology, PO Box Electrum 229, SE-16440 Kista, Sweden
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- Linnros, Jan, 1953- (författare)
- KTH,Material- och nanofysik,Royal Institute of Technology (KTH), Department of Materials and Nano Physics, SE-164 40 Kista, Sweden
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- Primetzhofer, Daniel (författare)
- Uppsala universitet,Tillämpad kärnfysik
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- Hallén, Anders (författare)
- KTH,Uppsala universitet,Tandemlaboratoriet,Tillämpad kärnfysik,Royal Institute of Technology, School of Information & Communication Technology, SE-16440 Kista, Sweden,Skolan för informations- och kommunikationsteknik (ICT)
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(creator_code:org_t)
- 2017-08-22
- 2017
- Engelska.
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Ingår i: Nanotechnology. - : IOP PUBLISHING LTD. - 0957-4484 .- 1361-6528. ; 28:37
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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https://urn.kb.se/re...
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Abstract
Ämnesord
Stäng
- The influence of swift heavy ion (SHI) irradiation on the photoluminescence (PL) of silicon nanoparticles (SiNPs) and defects in SiO2-film is investigated. SiNPs were formed by implantation of 70 keV Si+ and subsequent thermal annealing to produce optically active SiNPs and to remove implantation-induced defects. Seven different ion species with energy between 3-36 MeV and fluence from 10(11)-10(14) cm(-2) were employed for irradiation of the implanted samples prior to the thermal annealing. Induced changes in defect and SiNP PL were characterized and correlated with the specific energy loss of the employed SHIs. We find that SHI irradiation, performed before the thermal annealing process, affects both defect and SiNP PL. The change of defect and SiNP PL due to SHI irradiation is found to show a threshold-like behaviour with respect to the electronic stopping power, where a decrease in defect PL and an anticorrelated increase in SiNP PL after the subsequent thermal annealing are observed for electronic stopping exceeding 3-5 keV nm(-1). PL intensities are also compared as a function of total energy deposition and nuclear energy loss. The observed effects can be explained by ion track formation as well as a different type of annealing mechanisms active for SHI irradiation compared to the thermal annealing.
Ämnesord
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
Nyckelord
- silicon nanoparticle
- ion implantation
- photoluminescence
- swift heavy ion irradiation
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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