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On Different Process Schemes for MOSFETs With a Controllable NiSi-Based Metallic Source/Drain

Luo, Jun (author)
KTH,Integrerade komponenter och kretsar,School of Information and Communication Technology, KTH, Kista,Fudan University
Wu, Dongping (author)
State Key Lab of ASIC & Systems, School of Microelectronics, Fudan University, Shanghai, China,State Key Lab of ASIC and Systems, School of Microelectronics, Fudan University, Shanghai
Qiu, Zhijun (author)
State Key Lab of ASIC & Systems, School of Microelectronics, Fudan University, Shanghai, China,State Key Lab of ASIC and Systems, School of Microelectronics, Fudan University, Shanghai
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Lu, Jun (author)
Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
Hultman, Lars (author)
Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
Östling, Mikael (author)
KTH,Integrerade komponenter och kretsar,School of Information and Communication Technology, KTH, Kista,Royal Institute of Technology KTH
Zhang, Shi-Li (author)
Uppsala universitet,Fasta tillståndets elektronik,State Key Lab of ASIC and Systems, School of Microelectronics, Fudan University, Shanghai
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 (creator_code:org_t)
IEEE Institute of Electrical and Electronics, 2011
2011
English.
In: IEEE Transactions on Electron Devices. - : IEEE Institute of Electrical and Electronics. - 0018-9383 .- 1557-9646. ; 58:7, s. 1898-1906
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • This paper focuses on different silicidation schemes toward a controllable NiSi-based metallic source/drain (MSD) process with restricted lateral encroachment of NiSi. These schemes include thickness control of Ni, Ni-Pt alloying, and two-step annealing. Experimental results show that all the three process schemes can give rise to effective control of lateral encroachment during Ni silicidation. By controlling t(Ni), NiSi-based MSD metal-oxide-semiconductor field-effect transistors (MOSFETs) of gate length L-G = 55 nm are readily realized on ultrathin-body silicon-on-insulator substrates with 20-nm surface Si thickness. With the aid of dopant segregation (DS) to modifying the Schottky barrier heights of NiSi, both n- and p-type MSD MOSFETs show significant performance improvement, compared to reference devices without DS.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

Contacts
MOSFETs
silicides
TECHNOLOGY
TEKNIKVETENSKAP
Engineering Science with specialization in Electronics
Teknisk fysik med inriktning mot elektronik
Electrical engineering, electronics and photonics

Publication and Content Type

ref (subject category)
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