A 500 °C Active Down-Conversion Mixer in Silicon Carbide Bipolar Technology

Hussain, Muhammad Waqar, 1985- (författare): KTH,Skolan för elektroteknik och datavetenskap (EECS)

Malm, B. Gunnar, 1972- (författare): KTH,Integrerade komponenter och kretsar

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IEEE Press, 2018
2018
Engelska.
Ingår i: IEEE Electron Device Letters. - : IEEE Press. - 0741-3106 .- 1558-0563. ; 39:6, s. 855-858

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Abstract Ämnesord

Stäng

This letter presents an active down-conversion mixer for high-temperature communication receivers. The mixer is based on an in-house developed 4H-SiC BJT and down-converts a narrow-band RF input signal centered around 59 MHz to an intermediate frequency of 500 kHz. Measurements show that the mixer operates from room temperature up to 500 °C. The conversion gain is 15 dB at 25 °C, which decreases to 4.7 dB at 500 °C. The input 1-dB compression point is 1 dBm at 25 °C and −2.5 dBm at 500 °C. The mixer is biased with a collector current of 10 mA from a 20 V supply and has a maximum DC power consumption of 204 mW. High-temperature reliability evaluation of the mixer shows a conversion gain degradation of 1.4 dB after 3-hours of continuous operation at 500 °C.

Av författaren/redakt...: Hussain, Muhamma ...; Elahipanah, Hoss ...; Zumbro, John E.; Schröder, Stepha ...; Rodriguez, Saul; Malm, B. Gunnar, ...; visa fler...; Mantooth, H. Ala ...; Rusu, Ana, 1959-; visa färre...

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