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A 500 °C Active Down-Conversion Mixer in Silicon Carbide Bipolar Technology

Hussain, Muhammad Waqar, 1985- (author)
KTH,Skolan för elektroteknik och datavetenskap (EECS)
Elahipanah, Hossein (author)
KTH,Integrerade komponenter och kretsar
Zumbro, John E. (author)
University of Arkansas
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Schröder, Stephan, 1979- (author)
KTH,Mikro- och nanosystemteknik
Rodriguez, Saul (author)
KTH,Integrerade komponenter och kretsar
Malm, B. Gunnar, 1972- (author)
KTH,Integrerade komponenter och kretsar
Mantooth, H. Alan (author)
University of Arkansas
Rusu, Ana, 1959- (author)
KTH,Integrerade komponenter och kretsar
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 (creator_code:org_t)
IEEE Press, 2018
2018
English.
In: IEEE Electron Device Letters. - : IEEE Press. - 0741-3106 .- 1558-0563. ; 39:6, s. 855-858
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • This letter presents an active down-conversion mixer for high-temperature communication receivers. The mixer is based on an in-house developed 4H-SiC BJT and down-converts a narrow-band RF input signal centered around 59 MHz to an intermediate frequency of 500 kHz. Measurements show that the mixer operates from room temperature up to 500 °C. The conversion gain is 15 dB at 25 °C, which decreases to 4.7 dB at 500 °C. The input 1-dB compression point is 1 dBm at 25 °C and −2.5 dBm at 500 °C. The mixer is biased with a collector current of 10 mA from a 20 V supply and has a maximum DC power consumption of 204 mW. High-temperature reliability evaluation of the mixer shows a conversion gain degradation of 1.4 dB after 3-hours of continuous operation at 500 °C.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

4H-SiC BJTs
high-temperature
RF
mixer
Electrical Engineering
Elektro- och systemteknik

Publication and Content Type

ref (subject category)
art (subject category)

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