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Radiation resistance of transistor- and diode-type SiC detectors irradiated with 8-MeV protons
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- Strokan, N.B. (författare)
- Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russian Federation
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- Ivanov, A.M. (författare)
- Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russian Federation
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- Savkina, N.S. (författare)
- Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russian Federation
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- Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul 26, St. Petersburg, 194021, Russian Federation Kozlovskii, V.V., St. Petersburg Polytech. University, Politekhnicheskaya ul. 29, St. Petersburg, 195251, Russian Federation (creator_code:org_t)
- Pleiades Publishing Ltd, 2004
- 2004
- Engelska.
- Ingår i: Semiconductors (Woodbury, N.Y.). - : Pleiades Publishing Ltd. - 1063-7826 .- 1090-6479. ; 38:7, s. 807-811
- Tidskriftsartikel (refereegranskat)
Abstract
Ämnesord
Stäng
- Nuclear-particle detectors based on SiC with a structure composed of an n+-type substrate, a p-type epitaxial layer, and a Schottky barrier are studied. Structures with a ~10-µm-thick 6H-SiC layer exhibit transistor properties, whereas those with a ~30-µm-thick 4H-SiC layer exhibit diode properties. It is established that a more than tenfold amplification of the signal is observed in the transistor-type structure. The amplification is retained after irradiation with 8-MeV protons with a dose of at least 5 × 1013 cm-2, in this case, the resolution is =10%. Amplification of the signal was not observed in the structures of diode type. However, there were diode-type detectors with a resolution of ˜3%, which is acceptable for a number of applications, even after irradiation with the highest dose of 2 × 1014 cm-2. © 2004 MAIK "Nauka/Interperiodica".
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- TECHNOLOGY
- TEKNIKVETENSKAP
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- art (ämneskategori)
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- Strokan, N.B.
- Ivanov, A.M.
- Savkina, N.S.
- Lebedev, A.A.
- Kozlovskii, V.V.
- Syväjärvi, Mikae ...
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- Yakimova, Rosits ...
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