Single InAs/GaSb Nanowire Low-Power CMOS Inverter

Dey, Anil (author): Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH

Svensson, Johannes (author): Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH

Borg, Mattias (author): Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH

Ek, Martin (author): Lund University,Lunds universitet,Centrum för analys och syntes,Kemiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Centre for Analysis and Synthesis,Department of Chemistry,Departments at LTH,Faculty of Engineering, LTH

Wernersson, Lars-Erik (author): Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Faculty of Engineering, LTH

(creator_code:org_t)

2012-10-08
2012
English.
In: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984.

Related links:: http://dx.doi.org/10...; show more...; https://lup.lub.lu.s...; https://doi.org/10.1...; show less...

Abstract Subject headings

III − V semiconductors have so far predom- inately been employed for n-type transistors in high-frequency applications. This development is based on the advantageous transport properties and the large variety of heterostructure combinations in the family of III − V semiconductors. In contrast, reports on p-type devices with high hole mobility suitable for complementary metal − oxide − semiconductor (CMOS) circuits for low-power operation are scarce. In addition, the di ﬃ culty to integrate both n- and p-type devices on the same substrate without the use of complex bu ﬀ er layers has hampered the development of III − V based digital logic. Here, inverters fabricated from single n-InAs/p-GaSb hetero- structure nanowires are demonstrated in a simple processing scheme. Using undoped segments and aggressively scaled high- κ dielectric, enhancement mode operation suitable for digital logic is obtained for both types of transistors. State-of-the-art on- and o ﬀ -state characteristics are obtained and the individual long-channel n- and p-type transistors exhibit minimum subthreshold swings of SS = 98 mV/dec and SS = 400 mV/dec, respectively, at V ds = 0.5 V. Inverter characteristics display a full signal swing and maximum gain of 10.5 with a small device-to-device variability. Complete inversion is measured at low frequencies although large parasitic capacitances deform the waveform at higher frequencies.

By the author/editor: Dey, Anil; Svensson, Johann ...; Borg, Mattias; Ek, Martin; Wernersson, Lars ...

About the subject

ENGINEERING AND TECHNOLOGY: ENGINEERING AND ...; and Nano technology; and Nano technology

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