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Macroscopic defects in GaN/AlN multiple quantum well structures grown by MBE on GaN templates

Andersson, Thorvald, 1946 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Liu, Xinju, 1979 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Aggerstam, Thomas (author)
KTH,Mikroelektronik och tillämpad fysik, MAP,Kungliga Tekniska Högskolan (KTH),Royal Institute of Technology (KTH)
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Holmström, Petter (author)
KTH,Mikroelektronik och tillämpad fysik, MAP,Kungliga Tekniska Högskolan (KTH),Royal Institute of Technology (KTH)
Lourdudoss, Sebastian (author)
KTH,Mikroelektronik och tillämpad fysik, MAP,Kungliga Tekniska Högskolan (KTH),Royal Institute of Technology (KTH)
Thylen, Lars (author)
KTH,Mikroelektronik och tillämpad fysik, MAP,Kungliga Tekniska Högskolan (KTH),Royal Institute of Technology (KTH)
Chen, Y. L. (author)
National Sun Yat-Sen University
Hsieh, C. H. (author)
National Sun Yat-Sen University
Lo, I. (author)
National Sun Yat-Sen University
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 (creator_code:org_t)
Elsevier BV, 2009
2009
English.
In: Microelectronics Journal. - : Elsevier BV. - 0026-2692. ; 40:2, s. 360-362
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • We have used MBE to grow in AlN/GaN superlattices, with different number of periods, on 2.5-mu m-thick MOVPE-GaN templates to study the development of defects such as surface deformation due to strain. After growth the samples were studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), XRD and Fourier transform infrared spectroscopy (FT-IR). The strain increased with the number of quantum wells (QWs) and eventually caused defects such as microcracks visible by optical microscopy at four or more QW periods. High-resolution TEM images showed shallow recessions on the surface (surface deformation) indicating formation of microcracks in the MQW region. The measured intersubband (IS) absorption linewidth from a four period structure was 97 meV, which is comparable with the spectrum from a 10 period structure at an absorption energy of similar to 700 meV. This indicates that the interface quality of the MQW is not substantially affected by the presence of cracks.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

Intersubband
GaN
MBE
Surface cracks
Sapphire substrate
Template
Electrical engineering, electronics and photonics
Elektroteknik, elektronik och fotonik

Publication and Content Type

ref (subject category)
art (subject category)

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