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Nonlinear model for 40-GHz cold-FET operation

Avolio, G. (author)
Katholieke Universiteit Leuven
Raffo, A. (author)
University of Ferrara
Angelov, Iltcho, 1943 (author)
Chalmers tekniska högskola,Chalmers University of Technology
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Vadala, V. (author)
University of Ferrara
Crupi, G. (author)
Universita degli Studi di Messina,University of Messina
Caddemi, A. (author)
Universita degli Studi di Messina,University of Messina
Vannini, G. (author)
University of Ferrara
Schreurs, Dmmp (author)
Katholieke Universiteit Leuven
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 (creator_code:org_t)
2014
2014
English.
In: International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2014.
  • Conference paper (peer-reviewed)
Abstract Subject headings
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  • We extract the nonlinear model of a 0.15 μm GaAs pHEMT for cold-FET mixer applications. The model parameters are extracted from experimental data obtained by simultaneously driving the device under test with low-frequency large signals and a tickle tone at the RF operating frequency. The advantage of this approach is twofold. Firstly, as a result of a single measurement one can get separately the nonlinear currents and charge. Secondly, one can perform nonlinear characterization, and subsequently modeling, even if the RF frequency is such that its harmonics cannot be measured by today's nonlinear network vector analyzers.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

microwave transistors
nonlinear model
Microwave measurements

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Avolio, G.
Raffo, A.
Angelov, Iltcho, ...
Vadala, V.
Crupi, G.
Caddemi, A.
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Vannini, G.
Schreurs, Dmmp
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About the subject
ENGINEERING AND TECHNOLOGY
ENGINEERING AND ...
and Electrical Engin ...
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Chalmers University of Technology

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